Xiamen Sanan Optoelectronics Technology Co., Ltd.

Other

Jyh-Chiarng Wu

Shaohua Huang

Qunfeng Pan

Meng-Hsin Yeh

Su-Hui Lin

Xiaoqiang Zeng

Kechuang Lin

Shunping Chen

Jiansen Zheng

Kang-Wei Peng

Sheng-hsien Hsu

Yu-Tsai Teng

Hou-Jun Wu

Chi-Lun Chou

Hsiang-Ping Cheng

Keehuang Lin

Guojun Lu

Po-Hung Tsou

Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer () located on the n-type graded buffer layer; an active layer () located on the n-type limiting layer (); and a p-type limiting layer () located on the active layer (). A buffer layer is converted into an n-type graded buffer layer by means of an ion implantation method, and is applied to a light-emitting diode chip of a vertical structure while ensuring that a high-quality epitaxial structure is obtained, thereby being able to effectively reduce the contact resistance.

Light-emitting diode and manufacturing method therefor

A lighting emitting diode including: an n side layer and a p side layer formed by nitride semiconductors respectively; an active layer comprising a nitride semiconductor is between the n side layer and the p side layer; wherein, the n-side layer is successively laminated by an extrinsically-doped buffer layer and a compound multi-current spreading layer; the compound multi-current spreading layer is successively-laminated by a first current spreading layer, a second current spreading layer and a third current spreading layer; the first current spreading layer and the third current spreading layer are alternatively-laminated layers comprising a u-type nitride semiconductor layer and an n-type nitride semiconductor layer; the second current spreading layer is a distributed insulation layer formed on the n-type nitride semiconductor layer; and the first current spreading layer is adjacent to the extrinsically-doped buffer layer; and the third current spreading layer is adjacent to the active layer.

LED with current spreading layer and fabrication method

The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (); a light-emitting module on the conductive substrate (), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (), a light-emitting layer () and a second semiconductor layer () from top down; a first insulating layer () is arranged between the second semiconductor layer () of the first LED and the conductive substrate () for mutual isolation; an ohmic contact is formed between the second semiconductor layer () of the second LED and the conductive substrate (); a first conductive structure that connects the first semiconductor layer () of the first LED, the second semiconductor layer () of the second LED and the conductive substrate (); and a second conductive structure that connects the second semiconductor layer () of the first LED and the first semiconductor layer () of the second LED.

Vertical type AC-LED device and manufacturing method thereof

Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1&#xd7;10cmis formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.

Light emitting diode and manufacturing method therefor

A light emitting diode (LED) includes an active layer having one or more multilayer potential barriers and at least one well layer. Each multilayer potential barrier includes interlacing first and second InAlGaN thin layers. The first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced.

Gallium-nitride-based light emitting diodes with multiple potential barriers

A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (). A conductive wire () is distributed on a surface of the light emitting device, so that a single LED unit () has a vertical structure, and multiple LEDs are connected in series to form a high-voltage LED, thereby solving the problems of low light emitting efficiency and large thermal resistance of a horizontal structure.

Vertical light emitting device and manufacturing method thereof

A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.

Light emitting diode with a current concentrating structure

A method for manufacturing the AlGaInP LED having a vertical structure is provided, including: growing, epitaxially, a buffer layer, an n-type contact layer, an n-type textured layer, a confined layer, an active layer, a p-type confined layer and a p-type window layer in that order on a temporary substrate, to form a texturable epitaxial layer; forming a transparent conducting film with periodicity on the p-type window layer of the epitaxial layer, forming a regulated through-hole on the transparent conducting film, and filling the through-hole with a conducting material; forming a total-reflection metal layer on the transparent conducting film; bonding a permanent substrate with the texturable epitaxial layer via a bonding layer, and bring the total-reflection metal layer into contact with the bonding layer; removing the temporary substrate and the buffer layer; forming an n-type extension electrode on the exposed n-type contact layer; removing the n-type contact layer, and forming a pad on the n-type textured layer; and forming a p-type electrode on a back of the permanent substrate. The transparent multilayered film with periodicity provides a greater reflectivity difference and hence brings better results than the conventional reflector consisting of single-layered, or, non-periodic, transparent films; and light-emitting efficiency is enhanced.

AlGaInP light-emitting diode having vertical structure with transparent multilayered reflective films

The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.

Method for lift-off of light-emitting diode substrate

A GaN-based LED and a method for manufacturing the same are provided, and the method includes: providing a substrate, depositing a first transition layer on the substrate; forming a first patterned transition layer by etching with a mask; growing a first epitaxial layer on the first patterned transition layer; depositing a second transition layer on the first epitaxial layer; forming a second patterned transition layer by etching with a mask, such that the second patterned transition layer and the first patterned transition layer are cross-staggered with each other; growing a second epitaxial layer on the second patterned transition layer, wherein the second epitaxial layer includes a P-type layer, a light-emitting layer and an N-type layer; depositing a protection layer on the second epitaxial layer, dicing to obtain chips with a defined size; removing the first patterned transition layer and the second patterned transition layer on the substrate and the protection layer on the second epitaxial layer by wet etching, so as to form a structure with two layers of cross-staggered through holes; forming a conductive layer on the second epitaxial layer; and forming a P-electrode and an N-electrode by etching with a mask. The two layers of cross-staggered through holes of the LED chips can effectively reduce the dislocation density in the epitaxial growth of the GaN-based layer, and improve the lattice quality and luminous efficiency.

GaN-based light-emitting diode and method for manufacturing the same

A reflector for a GaN-based light-emitting device, method for manufacturing the reflector and GaN-based light-emitting device including the reflector are provided. The reflector is formed on a p-type GaN-based epitaxial layer and includes: a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. The whisker of un-doped GaN is positioned on the dislocation defect of the p-type GaN-based epitaxial layer, so that the Ag reflective layer can be separated from the dislocation defect of the p-type GaN-based epitaxial layer, thereby effectively preventing Ag from moving inside the dislocation defect via electromigration, and largely decreasing the possibility of current leakage of the light-emitting device including the Ag reflector.

Growing community of inventors

Xiamen, China

Jyh-Chiarng Wu