Ostendo Technologies, Inc.

Blue Photonics Inc.

Jyh-Chia Chen

Yea-Chuan Milton Yeh

Hussein S El-Ghoroury

Chih-Li Chuang

Mikhail V Kisin

Theeradetch Detchprohm

Xing Li

Shirong Liao

Jinlin Ye

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

Multi-color light emitting structures with controllable emission color

Light emitting structures with multiple uniformly populated active layers

Light emitting structures with selective carrier injection into multiple active layers

White light emitting structures with controllable emission color temperature

A III-nitride semiconductor light emitting device incorporating n-type III-nitride cladding layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers. The light emitting region is sandwiched between n- and p-type III-nitride cladding layers and includes multiple sets of multi-quantum-wells (MQWs). The first MQW set formed on the n-type cladding layer comprises relatively lower indium concentration. The second MQW set comprising relatively moderate indium concentration. The third MQW set adjacent to the p-type cladding layer incorporating relatively highest indium concentration of the three MQW sets and is capable of emitting amber-to-red light. The first two MQW sets are utilized as pre-strain layers. Between the MQW sets, intermediate strain compensation layers (ISCLs) are added. The combination of the first two MQW sets and ISCLs prevent phase separation and enhance indium uptake in the third MQW set. The third MQW set, as a result, retains sufficiently high indium concentration to emit amber-to-red light of high output power without any phase separation associated problems.

III-nitride semiconductor light emitting device having amber-to-red light emission (&#x3e;600 nm) and a method for making same

A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n&#x2212;1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.

Monolithic multi-color, multi-quantum well semiconductor LED

Growing community of inventors

Yorba Linda, CA, United States of America

Jyh-Chia Chen