Samsung Electronics Co., Ltd.

Juyeon Kim

Hanmei Choi

Bongjin Kuh

Sukjin Chung

Changyong Kim

Hakyu Seong

Dongsuk Shin

Sunguk Jang

Jeongmin Lee

Jongpil Kim

Heungno Oh

Myungjong Kim

Jongchan Kim

Eunnam Song

Jounggeun Jo

Hosung Son

A semiconductor device includes a plurality of patterns defined between a plurality of trenches and disposed on a substrate. A leaning control layer is disposed on sidewalls and bottoms of the plurality of trenches. A gap-fill insulating layer is disposed on the leaning control layer. At least one of the plurality of trenches has a different depth from one of the plurality of trenches adjacent thereto.

Semiconductor device including trench isolation layer and method of forming the same

A virtual biking system and a virtual hiking method by which a user can bike indoors while simulating actually being outdoors are provided. The virtual hiking system includes a Personal Computer (PC) configured to display a simulation screen, a motion platform configured to move corresponding to a state of a road of the simulation screen displayed on the PC, and a bicycle fixed onto the motion platform such that the simulation screen is changed corresponding to a movement and a speed of a handle.

Method and system for virtual hiking

Methods of forming a semiconductor device are provided. An active region is formed on a substrate. A temporary gate crossing the active region and a capping pattern covering the temporary gate are formed. Spacers are formed on sidewalls of the temporary gate. A growth-blocking layer is locally formed in an upper edge of the temporary gate. A source/drain region is formed on the active region adjacent to the temporary gate. The capping pattern, the first growth-blocking layer, and the temporary gate are removed to expose the active region. A gate electrode is formed on the exposed active region.

Methods of forming semiconductor device having gate electrode

Growing community of inventors

Hwaseong-si, South Korea

Juyeon Kim