Cabot Microelectronics Corporation

Cmc Materials, Inc.

Juyeon Chang

Ji Cui

Viet Lam

Alexander W Hains

Tina C Li

Sarah Brosnan

Chul Woo Nam

Brian Reiss

Prativa Pandey

The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.

Self-stopping polishing composition and method for bulk oxide planarization

The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.

Selective nitride slurries with improved stability and improved polishing characteristics

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Hwaseong-si, South Korea

Juyeon Chang