Samsung Electronics Co., Ltd.

Juwon Lee

Dogyeong Lee

Sang-Hyun Joo

Heewon Lee

Jinwook Lee

Jun-Ho Seo

Chanha Kim

Kwangwoo Lee

Yunjung Lee

Seungkyung Ro

Suk-Eun Kang

Youngwook Jeong

Suk-eun Kang

Sukeun Kang

Junho Seo

An operating method of a memory system includes storing normal data to a first storage area of a non-volatile memory in a first program mode among multiple program modes defined according to a number of bits stored in each memory cell; storing dummy data in the first storage area in at least one of the multiple program modes including the first program mode; and copying the normal data from the first storage area to a second storage area of the non-volatile memory based on dummy data stored in the first program mode.

Memory system for programming dummy data to a portion of a storage region in a program mode

An operation method of a nonvolatile memory device includes performing a 1-stage program step and a 1-stage verify step on a first word line, storing a first time stamp, performing the 1-stage program step and the 1-stage verify step on a second word line, storing a second time stamp, calculating a delay time based on the first time stamp and the second time stamp, determining whether the delay time is greater than a threshold value, adjusting at least one 2-stage verify voltage associated with the first word line from a first voltage level to a second voltage level based on the delay time, and performing a 2-stage program step and a 2-stage verify step on the first word line. A level of the at least one 1-stage verify voltage is lower than the second voltage level, and the second voltage level is lower than the first voltage level.

Operation method of nonvolatile memory device

A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

Storage device including nonvolatile memory device and operating method thereof

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Hwaseong-si, South Korea

Juwon Lee