Yonsei University

Lg Display Co., Ltd.

Jusung Chung

Hyun Jae Kim

Young Jun Tak

Dongwoo Kim

Su Seok Choi

Jeong Min Moon

Jeong Woo Park

Sungpil Ryu

Kiseok Chang

Jihwan Jung

Dong Hyun Choi

Min Seong Kim

Won Kyung Min

Gwan In Kim

Heesoo Lee

Tae Soo Jung

Jin Hyeok Lee

Won-Gi Kim

An apparatus for driving a stretchable display includes a first pixel driving signal generating module to generate a first pixel driving signal including data to be displayed on a stretchable display, a first pixel driving circuit to receive the first pixel driving signal to drive a first pixel, a second pixel driving circuit to drive a second pixel, wherein the driving of the second pixel is determined depending on whether the stretchable display is stretched, and a second pixel driving signal generating module to receive the first pixel driving signal and a power signal and to generate a second pixel driving signal to be applied to the second pixel driving circuit by using one of the first pixel driving signal and the power signal, based on a stretching state signal generated depending on whether the stretchable display is stretched.

Apparatus for driving stretchable display

The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.

Oxide semiconductor phototransistor improved in visible light absorption rate and manufacturing method thereof

Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300&#xb0; C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300&#xb0; C.

Oxide thin film transistor and method of fabricating the same

Growing community of inventors

Seoul, South Korea

Jusung Chung