3m Innovative Properties Company

Minnesota Mining and Manufacturing Company

Justine A Mooney

Ravi Palaniswamy

Arokiaraj Jesudoss

Alejandro Aldrin Il Agcaoili Narag

Andrew John Ouderkirk

Fong Liang Tan

Siang Sin Foo

Jian Gao

Gary A Shreve

Curtis Roy Guilbert

Alan George Hulme-Lowe

Nanayakkara Liyanage Somasiri

Sharon Mary Simpson

Doreen Catherine Lynch

Rui Yang

Andrew W Mott

Robert J Nairne

Nathan P Kreutter

Stephen S Poon

Qihong Nie

Duncan M Grieve

John H Stibbard

Alejandro Aldrin Ii Agcaoili Narag

James R White

David C Bays

Douglas B Gundel

Moses Mekala David

Kim Marie Vogel

Kevin D Landgrebe

Roger A Mader

Dipankar Ghosh

Gilbert L Eian

Raymond J Kenney

Guoping Mao

Takuzo Ishida

John D Geissinger

Ji-Hwa Lee

Brent D Lunceford

Phillip J Bergeron

Thach G Truong

Wei Meng Pee

William E Bottomley

Seungbae Min

A passive electrical article including a dielectric layer having a nonwoven material.

Passive electrical article

A flexible film including one or more MEMS elements and articles including the flexible film are described. The flexible film includes a polymer layer between two metal layers with one of the metal layers containing a perforation. The polymer layer includes voided regions that allow for relative movement of the two metal layers.

MEMS devices on flexible substrate

Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Two part flexible light emitting semiconductor device

A flexible polymeric dielectric layer has first and second major surfaces. The first major surface has a conductive layer thereon. The dielectric layer has at least one via extending from the second major surface to the first major surface. The conductive layer includes electrically separated first and second portions configured to support and electrically connect a light emitting semi-conductor device to the conductive layer.

Flexible light emitting semiconductor device

Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces with a conductive layer on the first major surface and at least one cavity in the first major surface with a conductive layer in the cavity that supports a light emitting semiconductor device. The conductive layer in the cavity is electrically isolated from the second major surface of the dielectric layer.

Flexible LED device and method of making

Provided is a flexible light emitting semiconductor device (), such as an LED device, that includes a flexible dielectric layer () having first and second major surfaces and at least one via () extending through the dielectric layer from the first to the second major surface, with a conductive layer () on each of the first and second major surfaces and in the via. The conductive layer () in the via supports a light emitting semiconductor device () and is electrically isolated from the conductive layer () on the first major surface of the dielectric layer.

Flexible LED device for thermal management

An article includes a flexible polymeric dielectric layer having first and second major surfaces. The first major surface has a conductive layer thereon and at least one cavity therein. The at least one cavity contains a conductive material including electrically separated first and second portions supporting and electrically connecting a light emitting semiconductor device to the conductive layer on the first major surface.

Flexible LED device with wire bond free die

Provided is an article comprising a flexible circuit comprising a polymeric dielectric layer having first and second major surfaces, one or both of the first and second major surfaces having a conductive layer thereon, wherein at least one conductive layer comprises an electrical circuit configured to power one or more light emitting semi-conductor devices located on the flexible circuit, wherein the flexible circuit is shaped to form a three dimensional structure.

Flexible light emitting semiconductor device having a three dimensional structure

A flexible circuit carrier including at least one layer of polymer dielectric material, at least one layer of conductive material thereover, each layer having two major surfaces, at least one of said layers having at least one aperture therein, wherein at least one layer has a material coated on at least a portion thereof having a Young's Modulus of from about 100 to about 200 GPa, a dielectric constant (between 45 MHz and 20 GHz) of from about 8 to about 12, and a Vickers hardness of from about 2000 to about 9000 kg/mm.sup.2.

Flexible circuits and carriers and process for manufacture

A method of altering a portion of the semiconductive layer of an electric power cable, to increase its resistance so as to render it electrically insulative. The semiconductive layer is loaded with carbon powder which forms chains to provide conductive pathways through the layer. By introducing an intercalant into the semiconductive layer, which causes the layer to swell, the conductive pathways are interrupted and the material is rendered insulative (&gt;10.sup.4 .OMEGA.-cm). The intercalant may be a polymerizable material with a curing agent which is cured in situ, i.e., without removing the semiconductive layer from the cable. By this method, flashover to the semiconductive layer at a cable splice or termination may be prevented without requiring tedious removal of the exposed portion of the semiconductive layer. The method is usable with both strippable and coextruded semiconductive layers.

Method for altering cable semiconductive layer

A thermographic element comprising in a non-aqueous binder medium a silver salt oxidizing agent in reactive association with a compound comprising a plurality of redox color releasing moieties such that oxidation of each redox color releasing moiety causes release from said compound of a thermally diffusible dye. The compounds many of which are new incorporate two or more developer moieties into a single molecule to minimize the diffusibility of the compound. Following oxidation, either directly by the silver salt or by means of a cross-oxidizing agent, each oxidized developer moiety releases a thermally diffusible dye. The compounds are of sufficient size and molecular weight to slow or prevent diffusion in imaging systems and yet possess several active developer moieties per molecule which is advantageous over known ballasted dye releasers which comprise bulky molecules with only a single developer moiety.

Developing agents for (photo) thermographic systems

Growing community of inventors

Austin, TX, United States of America

Justine A Mooney