Creeled, Inc.

Justin White

Peter Scott Andrews

Kevin Haberern

Michael Check

David Suich

Steven Wuester

Seth Joseph Balkey

Pixelated-LED chips include substrate sidewalls with sidewall involutions and/or increased sidewall surface area regions to affect light extraction therefrom. A LED lighting device incorporates a superstrate that supports lumiphoric material and includes sidewalls with sidewall involutions and/or increased sidewall surface area regions. Methods for fabricating sidewall features may include etching (e.g., deep etching) of substrate or superstrate materials, such as by using an etch mask having edges with non-linear shapes to produce and/or enhance sidewall involutions when an etchant is supplied through the etch mask to selectively consume substrate or superstrate material.

LED chips and devices with textured light-extracting portions, and fabrication methods

Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.

Edge structures for light shaping in light-emitting diode chips

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.

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Morrisville, NC, United States of America

Justin White