Chevron Phillips Chemical Company LP

Samsung Electronics Co., Ltd.

Samsung Research America, Inc.

Justin Wade Kamplain

Elizabeth Mary Lanier

Jonathan S Steckel

Zhengguo Zhu

Chunming Wang

Craig Allen Breen

James A Solis

Zhiming Wang

Peter M Allen

Whitney Miller

Charles Hamilton

Keeve Gurkin

Catherine Mauck

Todd A Robinson

Inia Song

JaNeille K Dixon

Polymer compositions containing an ethylene polymer, 50-1500 ppm by weight of a glycerol stearate, and 250-7500 ppm by weight of an antioxidant selected from a phenolic antioxidant, a phosphite antioxidant, a thioester antioxidant, or any combination thereof, are described. These polymer compositions have improved initial color, improved color after long-term aging, or improved color after multi-pass extrusion processing.

Additive systems containing an antioxidant and a glycerol stearate for improved color in polyethylene resins

A method of analyzing a polymer resin comprising: providing a polymer resin sample having two or more polymer components; subjecting the sample to aTREF analysis to yield aTREF elution trace by contacting the sample with aTREF solvent to form sample solution; introducing sample solution into aTREF column and allowing elution of polymer components at different elution rates along the column; eluting from the aTREF column an aTREF eluent comprising the polymer components eluting at different rates; and subjecting the aTREF eluent to IR detection to yield the aTREF elution trace; identifying the components of the sample to yield identified components by comparing the elution trace with an identification library that comprises a plurality of known polymer aTREF elution traces correlated with known polymer components characterized by identifying parameters (density, SCB, crystallization temperature, MI, HLMI, MWD); and quantifying each of the identified components to yield quantified polymer components via chemometric analysis.

Utilizing aTREF data with chemometric analysis for determining the types of polyethylene present in polymer blends and multilayer films

Polymer compositions containing a titanated chromium-based ethylene polymer, 150-350 ppm of zinc stearate and/or calcium stearate, 50-5000 ppm of a phenolic antioxidant, 200-3000 ppm of a diphosphite antioxidant, and optionally, 200-3000 ppm of a monophosphite antioxidant, are described. These polymer compositions have improved long-term color stability, as well as lower levels of color formation after aging.

Methods for improving color stability in polyethylene resins

A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed. The method includes heating a first mixture including nanocrystal seeds comprising indium arsenide with an absorbance in a range from about 700 to 800 nm and a liquid medium in a reaction vessel to a first temperature; and combining the nanocrystals seeds comprising indium arsenide with an indium-source mixture and an arsenic-source mixture under conditions suitable to increase the size of the seeds to form the semiconductor nanocrystals comprising indium arsenide, wherein the indium-source mixture includes an indium precursor, a coordinating solvent, and a carboxylic acid; and the arsenic-source mixture includes a liquid medium and an arsenic precursor represented by the formula As(Y(R)), where Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, alkyl, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, thioalkyl, alkenyl, alkynyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl. Semiconductor nanocrystals are also disclosed.

Semiconductor nanocrystals and method of preparation

Disclosed are a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element; a method for preparing a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, and a light emitting device including an emissive material comprising a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element.

Semiconductor nanocrystals, a method for preparing a semiconductor nanocrystal, and product including same

A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed. In certain embodiments, a semiconductor nanocrystal includes one or more Group IIIA and one or more Group VA elements.

Semiconductor nanocrystals and methods of preparation

A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.

Method of making semiconductor nanocrystals

A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.

A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion.

Growing community of inventors

Bartlesville, OK, United States of America

Justin Wade Kamplain