Government of the United States of America, As Represented by the Secretary of Commerce

University of California

Arizona State University

University of Colorado

University of Denver

Justin Shaw

Thomas J Silva

Hans Toya Nembach

Vasudeva Atluri

Nicole Herbots

Robert Culbertson

James D Bradley

Eric Edwards

Grant A Riley

Xin Fan

A method for determining at least one property of magnetic matter includes: applying a magnetic field to magnetic matter; directing first light on the magnetic matter at a first set of incident angles; receiving a first set of signatures associated with the first light scattered from the magnetic matter; varying orientation of the magnetic matter with respect to the magnetic field; directing second light on the magnetic matter at a second set of incident angles; receiving a second set of signatures associated with the second light scattered from the magnetic matter; determining, by processing the first set and the second set of signatures according to a dispersion relation, at least one property of the magnetic matter.

Method and system for determining at least one property of magnetic matter

A nonvolatile memory cell includes: a first fixed magnetic layer; a first nonmagnetic electrode disposed on the first magnetic layer; a memory storage layer disposed on the first nonmagnetic electrode; a tunnel barrier layer disposed on the memory storage layer; a second fixed magnetic layer disposed on the tunnel barrier layer; and a second nonmagnetic electrode disposed on the second fixed magnetic layer.

Magnetic article and rotation of magnetic spins via spin-orbit effect in same

The invention provides novel methods for preparing semiconductor substrates for the growth of an ultra-thin epitaxial interfacial phase thereon. The invention additionally provides the ultra-thin epitaxial interfacial phase formed on a semiconductor substrate prepared by the methods of the invention. Epitaxiality of the interfacial phase is ensured by maintaining the cleaned semiconductor substrate in a static and inert atmosphere prior to oxidation to form the interfacial phase. Such interfacial phase are useful as capping layers and dielectric layers for semiconductor devices.

Methods for preparing semiconductor substrates and interfacial oxides thereon

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Boulder, CO, United States of America

Justin Shaw