University of California

Quintessent Inc.

The State University of New York

Justin Norman

John E Bowers

Arthur Charles Gossard

Daehwan Jung

Michael Davenport

Brian Robert Koch

Kunal Mukherjee

Alan Liu

Jennifer Selvidge

Chen Shang

Yating Wan

Douglas Duane Coolbaugh

Jonathan Klamkin

Douglas La Tulipe

Gerald L Leake, Jr

William Charles

Songtao Liu

Eamonn Hughes

Michael Lawrence Belt

Alan Young Liu

The present disclosure is directed toward photonic elements comprising rib-waveguide-based ring resonators having high coupling efficiency between their bus and ring waveguides within the coupling region of the ring resonator, as well as operability over a wide spectral range. Embodiments disclosed herein employ a small-diameter ring waveguide and a bus waveguide that collectively define an asymmetrical coupler having a coupling region at which the optical confinement of the bus waveguide is stronger on side of the bus waveguide distal to the ring waveguide than on the side of the bus waveguide that is proximal to the ring waveguide. In some embodiments, in the coupling region, the bus waveguide has ridge and an inner bus-slab portion that is shared with the ring waveguide, while the outer bus-slab portion is at least partially removed to give rise to stronger optical confinement at the outer edge of the ridge of the bus waveguide.

Photonic systems comprising an asymmetric coupler and methods of fabrication

A quantum dot (QD) laser comprises a semiconductor substrate and an active region epitaxially deposited on the semi-conductor substrate. The active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers. A net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.

Quantum dot lasers and methods for making the same

Integrated-optics systems are presented in which an optically active device is optically coupled with a silicon waveguide via a passive compound-semiconductor waveguide. In a first region, the passive waveguide and the optically active device collectively define a composite waveguide structure, where the optically active device functions as the central ridge portion of a rib-waveguide structure. The optically active device is configured to control the vertical position of an optical mode in the composite waveguide along its length such that the optical mode is optically coupled into the passive waveguide with low loss. The passive waveguide and the silicon waveguide collectively define a vertical coupler in a second region, where the passive and silicon waveguides are configured to control the distribution of the optical mode along the length of the coupler, thereby enabling the entire mode to transition between the passive and silicon waveguides with low loss.

System comprising an integrated waveguide-coupled optically active device and method of formation

An epitaxial structure includes a semiconductor substrate, a dislocation blocking layer; and one or more active layers.

Dislocation glide suppression for misfit dislocation free heteroepitaxy

A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Monolithic integrated quantum dot photonic integrated circuits

There is set forth herein a method including a substrate; a dielectric stack disposed on the substrate; one or more photonics device integrated in the dielectric stack; and a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack.

Photonics structure with integrated laser

A silicon-photonic integrated circuit comprising a direct-bandgap-semiconductor-based active optical device that is epitaxially grown on an indirect-bandgap SOI substrate () is disclosed. The structure of the active optical device includes an active region () having quantum dots () made of InGaAs that are embedded in one or more confinement layers (n-InP, p-InP), where the bandgap of the confinement layers is higher than that of the quantum dots. Further the confinement-layer material is preferably lattice matched to the quantum dot material in order to suppress associated crystalline defects within the material are located away from the center of its bandgap such that they suppress recombination-enhanced defect-reaction-driven degradation of the active optical device. The active optical device is epitaxially grown on a handle substrate of an SOI substrate that has a surface waveguide formed in its device layer, where the active region and the surface waveguide are at the same height above the handle wafer surface.

Integration of direct-bandgap optically active devices on indirect-bandgap-based substrates

Growing community of inventors

Goleta, CA, United States of America

Justin Norman