At&t Bell Laboratories

Triquint Technology Holding Co.

Agere Systems Optoelectronics Guardian Corp.

Justin Larry Peticolas

Abdallah Ougazzaden

Mindaugas Fernand Dautartas

John C Bean

Leonard Jan-Peter Ketelsen

Yuliya Anatolyevna Akulova

Kenneth Gerard Glogovsky

Gregg S Higashi

Robert Hull

Marlin Wilbert Focht

The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.

Optical device and method of manufacture thereof

A beam expander for providing coupling between a semiconductor optical device and an optical fiber comprises a double layer structure that may be integrated with the optical device. The first, underlying layer of the expander comprises a relatively high refractive index material (e.g., 3.34), thus providing improved coupling efficiency between the optical device and the fiber. The second, covering layer of the expander comprises a relatively low refractive index material (e.g., 3.28), for providing the large mode size desired at the fiber input. The parameters of each layer can be adjusted independently, allowing for the two criteria (coupling efficiency and mode size) to be separately optimized.

Double layer beam expander for device-to-fiber coupling

Disclosed are strained layer heteroepitaxial structures (e.g., GeSi/Si) that can have low threading dislocation density as well as a substantially planar surface. Furthermore, a large fraction (e.g., &gt;90%) of the total surface are of the structure can be available for device processing. These advantageous features are achieved through utilization of novel 'dislocation sinks' on or in the substrate whose height parameter h is less than or about equal to the thickness of the strained heteroepitaxial layer on the substrate. Exemplarily, h.gtoreq.h.sub.c, where h.sub.c is the critical thickness associated with misfit dislocation generation in the substrate/overlayer combination.

Article comprising a lattice-mismatched semiconductor heterostructure

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Wescosville, PA, United States of America

Justin Larry Peticolas