Novellus Systems Incorporated

Texas Instruments Corporation

Silicon Microstructures, Inc.

Measurement Specialties, Incorporated

Justin F Gaynor

Scott Robert Summerfelt

Luigi Colombo

Mark R Visokay

Theodore Sidney Moise

Francis Gabriel Celii

Stephen Roy Gilbert

Guoqiang Xing

Omar Abed

Stephen C Terry

Holger Doering

Fernando Alfaro

Judy H Huang

Archita Sengupta

Bart Jan Van Schravendijk

Robert H Havemann

Mona M Eissa

Mark A Kressley

Gertjan Van Sprakelaar

Paul E Brunemeier

Patrick Vancleemput

Bart J Schravendijk

Sensor devices and methods of operating for use with catheter-based treatments of microcardial microvascular obstruction by infusion of fluids having protective agents into vasculature are provided herein. Such catheter devices can include a first lumen configured for advancement over a guidewire and for passage of fluid having protective agents after removal of the guidewire and a second lumen for inflation of an angioplasty balloon and can further include a temperature and/or pressure sensor mounted on the catheter body. Such catheter devices can further include use of a distal occlusive membrane between the angioplasty balloon and distal end to facilitate infusion into microvasculature. The occlusive membrane can be deployed by relative movement of concentric channels, thereby reducing the need for additional lumen while optimizing the size of the catheter device and lumens.

Sensor device and methods of operation for a catheter based treatment of myocardial microvascular obstruction

Reliable flow sensors with enclosures that have predictable thermal variations and reduced mechanical tolerances for a more consistent fluid flow and more consistent flow measurements. Thermal variations can be made predictable by using etched structures in silicon blocks. Mechanical tolerances can be reduced using lithography and high-precision semiconductor manufacturing equipment and techniques.

Resistive flow sensor

Pressure sensors and associated structures that may have reduced light sensitivity. An example may provide structures reducing light at a component on a membrane of a pressure sensor.

Light shields for catheter sensors

Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

Manufacturing catheter sensors

Pressure sensors and their methods of manufacturing, where the pressure sensors have a small, thin form factor and may include features designed to improve manufacturability and where the method of manufacturing may improve yield and reduce overall costs.

Pressure sensors that may be used in harsh or corrosive environments. One example may provide a pressure sensor having membrane with a top surface that may be free of components or electrical connections. Instead, components and electrical connections may be located under the membrane. By providing a top surface free of components and electrical connections, the top surface of the pressure sensor may be placed in harsh or corrosive environments, while components and electrical connections under the membrane may remain protected.

Pressure sensing device having contacts opposite a membrane

The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.

Treatment of low K films with a silylating agent for damage repair

Treatment of low k films with a silylating agent for damage repair

A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.

Integrated circuit and method

Method and apparatus for using a silylating agent after exposure to an oxidizing environment for repairing damage to low-k dielectric films are described. Plasma photoresist removal, or ashing, may damage bonds in the low-k materials, which may lead to a significant increase in the dielectric constant of the materials. The silylating agent may be used to repair damage to the low-k films after the ashing process. Additionally, a curing process using an oxidizing environment may damage bonds in low-k materials, which may subsequently be repaired by a silylating process. The described method and apparatus may be used with low-k dielectric films including hydrophobic porous oxide films. A chamber for processing a wafer in an oxidizing environment and subsequently performing a silylation process includes an oxidizing agent inlet and a silylating agent inlet. Additionally, a chamber for performing an etch process, processing a wafer in an oxidizing environment, and subsequently performing a silylation process includes an oxidizing agent inlet, a silylating agent inlet, and an etch gas inlet. A cluster tool can include a chamber for processing a wafer in an oxidizing environment and subsequently performing a silylation process, a wafer in/out module, and may include additional processing modules such as etch modules, deposition modules for depositing low-k layers, and deposition modules for depositing cap layers.

Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments

A composition comprises a first component that provides a predetermined response to radiation, and a second component. Upon curing of the composition, portions of the first component bind together portions of the second component to form an inhomogeneous material having physical properties substantially determined by the second component. The function provided by the first component's response to radiation and the macroscopic properties determined by the second component are largely decoupled and thus may be separately optimized. Some embodiments provide photo-patternable low dielectric constant materials that may be advantageously employed in metal interconnect layers in integrated circuits, for example.

Inhomogeneous materials having physical properties decoupled from desired functions

The adhesion of overlying layers to a silicalite-plus-binder dielectric layer is enhanced by forming a layer that includes the binder in a higher concentration. The overlying layer, e.g., silicon dioxide, silicon carbide or silicon nitride, adheres more tightly to the higher-concentration binder layer. Although the presence of the higher-concentration binder layer may increase the dielectric constant of the overall silicalite-plus-binder stack, the increase is generally minimal.

Binder-enriched silicalite adhesion layer and apparatus for fabricating the same

An electronic device and method of construction are disclosed that provide for a dielectric layer ( ) having a low dielectric constant. A conductive sheath layer ( ) is disposed adjacent to the dielectric layer ( ). The conductive sheath layer ( ) is operable to electrically divert etchant particles used in a plasma etch process away from the dielectric layer ( ). In another embodiment of the disclosed invention, a method is provided which comprises covering an inner layer ( ) with a layer of dielectric material ( ). The method also comprises depositing a conductive sheath layer ( ) outwardly from the layer of dielectric material ( ). A photoresist layer ( ) is then deposited outwardly from the conductive sheath layer ( ). The photoresist layer ( ) is then patterned resulting in a patterned mask composed of portions of the photoresist layer ( ) disposed outwardly from the conductive sheath layer ( ). Portions of the conductive sheath layer ( ) not covered by the patterned mask are etched using a plasma etch process selective to the conductive sheath layer ( ) relative to the photoresist layer ( ). Portions of the dielectric layer ( ) not covered by the patterned mask are also etched using a plasma etch process selective to the dielectric layer ( ) relative to the photoresist layer ( ). The photoresist layer ( ) is then removed from the conductive sheath layer ( ), the conductive sheath layer ( ) providing mechanical and electrical shielding for the dielectric layer ( ).

Method and system for avoiding plasma etch damage

Structure-directing agents, such as quaternary ammonium, are removed from silicalite or zeolite crystals by oxidative attack (e.g., using CO , H O or NH ) first, by using a combination of ammonia, water and hydrogen peroxide at an elevated temperature; second, by using choline, hydrogen peroxide and a surfactant; third, by using ozonated water; and fourth, by exposing the crystals to an oxygen-containing plasma. Thin porous films of silicalite or zeolite crystals are useful, for example, in forming low dielectric constant insulating layers in semiconductor chip fabrication. In order for the silicalite or zeolite crystals to form a low dielectric constant film, however, the entrained molecules of the structure-directing agent must be removed.

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San Jose, CA, United States of America

Justin F Gaynor