Globalfoundries Inc.

Globalfoundries U.S. Inc.

Justin C Long

Atsushi Ogino

Viorel C Ontalus

Jim Shih-Chun Liang

Jim S Liang

Robert K Baiocco

The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region in a semiconductor substrate; a base region adjacent to the collector region; and an emitter extending above the base region and comprising semiconductor material and a hardmask surrounding a lower portion of the semiconductor material.

Bipolar transistor

A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer.

Method to reduce resistance for a copper (Cu) interconnect landing on multilayered metal contacts, and semiconductor structures formed therefrom

Method to reduce resistance for a copper (CU) interconnect landing on multilayered metal contacts, and semiconductor structures formed therefrom

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Poughkeepsie, NY, United States of America

Justin C Long