Miradia Inc.

Siphoton Inc.

Nanostructures, Inc.

Justin Allen Payne

Xiao Charles Yang

Ye Wang

Yuxiang May Wang

Wook Ji

Dongmin Chen

Howard Woo

Shaoher X Pan

William Spencer Worley, Iii

Li-Tien Tseng

Jay Chieh Chen

Philip E Mauger

Michael Heuken

Michael V Williamson

Mark Alan Adler

The present disclosure is related to an occlusion device having a mesh structure. The occlusion device configured to transition between a two-dimensional configuration and a three-dimensional configuration. In the two-dimensional configuration and at rest, the occlusion device is flat or planar. In the three-dimensional configuration, the occlusion device defines an internal volume.

System and methods for embolized occlusion of neurovascular aneurysms

A method for forming an optical deflection device includes providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate. The upper surface region includes one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region. The method also includes forming a planarizing material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer using the fill material. The method further includes forming a thickness of silicon material at a temperature of less than 300&#xb0; C. to maintain a state of the planarizing material.

Fabrication of a high fill ratio silicon spatial light modulator

A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.

Non-polar semiconductor light emission devices

A resonator includes a CMOS substrate having a first electrode and a second electrode. The CMOS substrate is configured to provide one or more control signals to the first electrode. The resonator also includes a resonator structure including a silicon material layer. The resonator structure is coupled to the CMOS substrate and configured to resonate in response to the one or more control signals.

Method and apparatus for MEMS oscillator

A method for fabricating a micro electromechanical device includes providing a first substrate including control circuitry. The first substrate has a top surface and a bottom surface. The method also includes forming an insulating layer on the top surface of the first substrate, removing a first portion of the insulating layer so as to form a plurality of standoff structures, and bonding a second substrate to the first substrate. The method further includes thinning the second substrate to a predetermined thickness and forming a plurality of trenches in the second substrate. Each of the plurality of trenches extends to the top surface of the first substrate. Moreover, the method includes filling at least a portion of each of the plurality of trenches with a conductive material, forming the micro electromechanical device in the second substrate, and bonding a third substrate to the second substrate.

Method and structure for forming a gyroscope and accelerometer

An optical deflection device for a display application includes a semiconductor substrate comprising an upper surface region defining an upper surface plane. The optical deflection device also includes one or more electrode devices provided overlying the upper surface region and a hinge device including a silicon material and coupled to the upper surface region at a predetermined height above the upper surface plane. The optical deflection device further comprises a plurality of landing pads including a silicon material and coupled to the upper surface region at the predetermined height from the upper surface plane and a mirror structure. The mirror structure includes a post portion coupled to the hinge device and a mirror plate portion coupled to the post portion.

Method and system for optical MEMS with flexible landing structures

A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.

Semi-polar semiconductor light emission devices

A method of performing overlay error correction includes forming a photoresist layer over a substrate and exposing a first set of apertures to incident radiation. The method also includes determining an overlay error associated with the first set of apertures and determining an overlay correction as a function of the determined overlay error. The method further includes exposing a data area and a second set of apertures. The data area and the second set of apertures are exposed based, in part, on the determined overlay correction. Moreover, the method includes verifying the determined overlay correction.

Method and system for overlay correction during photolithography

A method for forming an optical deflection device includes providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate. The upper surface region includes one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region. The method also includes forming a planarizing material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer using the fill material. The method further includes forming a thickness of silicon material at a temperature of less than 300 &#xb0; C. to maintain a state of the planarizing material.

An optical deflection device for a display application. The optical deflection device includes a semiconductor substrate including an upper surface region and one or more electrode devices provided overlying the upper surface region. The optical deflection device also includes a hinge device including a silicon material and coupled to the upper surface region. The optical deflection device further includes a spacing defined between the upper surface region and the hinge device and a mirror structure including a post portion coupled to the hinge device and a mirror plate portion coupled to the post portion and overlying the hinge device.

Growing community of inventors

San Jose, CA, United States of America

Justin Allen Payne