Other

Jury Vasilievich Jushkov

Oleg Evgenievich Korobov

Vadim Nikolaevich Maslov

Ellin Petrovich Bochkarev

Nikolai Georgievich Voronin

Ljudvig Alexandrovich Dolomanov

Emilia Stanislavovna Kudeyarova

Vladimir Grigorievich Demyanets

Valentin Petrovich Khlebnikov

Vladimir Viktorovich Nechaev

Grigory Borisovich Goldin

Jury Anatolievich Drozdov

Vladimir Petrovich Kuklev

A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.

Device for epitaxial growing of semiconductor periodic structures from

Growing community of inventors

Moscow, Russia

Jury Vasilievich Jushkov