Other

Jury G Pukhov

Arkady A Belsky

Raisa V Ivanova

Alexandr V Peredereev

Vladimir N Abrjutin

Vladimir V Kozhemyakin

Galina E Masjuk

Vyacheslav A Kirichenko

Oleg N Kalashnik

Vyacheslav P Ezhkov

A process for producing high-purity gallium from gallium-arsenic containing wastes resulting from the manufacture of semiconductors which comprises a vacuum-thermal decomposition of said wastes under a residual pressure of from 1.10.sup.-1 to 1.10.sup.-2 mm Hg while elevating temperature to from 25.degree. to 1,150.degree. C. at variable heating rates ranging from 0.5.degree. to 20.degree. C./min. The vacuum-thermal decomposition of the wastes is accompanied by sublimation of arsenic which is condensed. The resulting melt of gallium is cooled to a temperature of from 50.degree. to 100.degree. C. at variable cooling rates ranging from 0.05.degree. to 15.degree. C./min. Then the melt of gallium is filtered at the cooling temperature of the melt. The filtered gallium melt is subjected to a hydrochemical treatment. The melt of gallium having passed the hydrochemical treatment is subjected to a fractional multi-stage crystallization to crystallize gallium in an amount of from 60 to 95% by mass of its initial charge in each stage; the metal residues enriched with impurities are recycled from each subsequent stage to each preceding one.

Process for producing high-purity gallium

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Svetlovodsk Kirovogradskoi oblasti, undefined

Jury G Pukhov