Fujitsu Corporation

Honda Electron Co., Ltd.

Fujitsu Tohoku Electronics

Juro Inomata

Masahiro Sugimoto

Akira Abiru

Hitoshi Hori

Kuninori Takahashi

Masaru Nakamura

Akihiro Endo

A character recognition method includes steps of comparing input image data with character patterns of a predetermined dictionary and recognizing a character indicated by the input image data without requiring any special hardware in a conventional character recognition apparatus. Namely, the input image data is processed by using an unwanted-dot elimination mask and processed by using a positive mask and negative mask of each of the character patterns in the dictionary, and then a discrepancy ratio of each of the character patterns is calculated. Consequently, highly accurate character recognition can be carried out at a low cost without using special hardware, by decreasing the negative infludence of a flaw, a missing portion, dust, and the like.

Character recognition method

A gas in a process chamber, such as a sputtering chamber, having a typical inside pressure of 10.sup.-1 to 10.sup.-3 Torr, is analyzed by a mass spectrometer, which should be used at a pressure range of lower than around 10.sup.-4 Torr. The method comprises evacuating a process chamber by a vacuum pump and supplying a gas to the process chamber, whereby a pressure in the process chamber is determined by the vacuum pump and the supplied gas, and that pressure in the process chamber is higher than a pressure in the vacuum pump, and analyzing the gas at a portion of or around the vacuum pump, which portion has a pressure lower than the pressure in the process chamber, by using a mass spectrometer.

Method and device for analyzing gas in process chamber

A semiconductor device having a protective polyimide film layer for preventing .alpha.-rays from intruding into the device is provided. The polyimide film layer has incorporated therein a salient amount of finely divided filler particles, and is formed on the surface of at least a region wherein the semiconductor element is formed. The polyimide film layer is formed by coating the semiconductor substrate with a liquid polyimide or polyamic acid composition having incorporated therein the finely divided filler particles, according to a screen printing method.

Semiconductor device and method for producing same

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Mizusawa, Japan

Juro Inomata