Samsung Electronics Co., Ltd.

Juri Lee

Seungmin Song

Sung-Dae Suk

Yong-Suk Tak

Taegon Kim

Sihyung Lee

Seungmo Kang

An integrated circuit (IC) device includes a fin-type active region extending long in a first lateral direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region, and a source/drain region adjacent to the gate line on the fin-type active region, the source/drain region. The source/drain region includes a lower source/drain region and an upper source/drain region. The lower source/drain region includes at least one silicon isotope selected from silicon isotopes ofSi,Si, andSi, and the upper source/drain region includes aSi element at a content higher than a content of theSi element in the lower source/drain region.

Integrated circuit devices

Disclosed are semiconductor devices including a field effect transistor and methods of manufacturing the same. The semiconductor device comprises a device isolation layer in an upper portion of a substrate, first active patterns on a first region of the substrate and second active patterns on a second region of the substrate, gate structures extending in one direction and running across the first and second active patterns, and a blocking layer on a recessed region of the device isolation layer of the first region. Each of the first and second active patterns comprises a plurality of semiconductor patterns that are vertically stacked and spaced apart from each other. The semiconductor patterns of the first active patterns have conductivity different from that of the semiconductor patterns of the second active patterns. The blocking layer is limited on the first region.

Semiconductor devices and methods of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Juri Lee