Seiko Epson Corporation

Tokyo Institute of Technology

Seiko Epson Kabushiki Kaisha

Sieko Epson Corporation

Juri Kato

Takao Miyazawa

Kazuo Tanaka

Kenji Yokoyama

Kei Kanemoto

Masashi Ogita

Takamitsu Higuchi

Teruo Takizawa

Toshiki Hara

Yasuhiro Ono

Hideaki Oka

Masamitsu Uehara

Shunichiro Ohmi

A sensor device includes a first electrode, a second electrode, and a functional element. The first electrode includes a porous body having holes in at least the vicinity of a surface of the first electrode, and includes a first metallic material in which either a first passivation film is formed on the surface or the first passivation film present on the surface is lost. The second electrode spaced apart from the first electrode includes a porous body having holes in at least the vicinity of a surface of the second electrode. The functional element is configured to measure a difference in electric potential between the first and second electrodes. A porosity of the first electrode and a porosity of the second electrode are different from each other. The sensor device is configured to measure a state of a site to be measured based on the difference in electric potential.

Sensor device

A sensor device includes a first electrode, a second electrode and a functional element. The first electrode includes a first metallic material in which either a first passivation film is formed on a surface thereof or the first passivation film present on the surface thereof is lost, in association with changes in an environment of a measurement site. The second electrode includes a second metallic material different from the first metallic material, the second electrode being spaced apart from the first electrode. The functional element is configured to measure a difference in electric potential between the first electrode and the second electrode that changes depending on presence or absence of the first passivation film.

Corrosion detection sensor device

A sensor device includes first and second electrodes, a coating film and a functional element. The first electrode includes a first metallic material in which either a first passivation film forms on a surface thereof or the first passivation film present on the surface thereof is lost, in association with changes in the pH of a measurement site. The second electrode includes a second metallic material different from the first metallic material, and is spaced apart from the first electrode. The coating film includes a third metallic material different from the first and second metallic materials. The coating film covers at least the first or second electrode. The functional element is configured to measure a difference in electric potential between the first and second electrodes that changes depending on presence or absence of each of the first passivation film and the coating film in association with the changes in pH.

A sensor device includes a first electrode, a second electrode and a functional element. The first electrode includes a porous body having a connecting hole where adjacent holes communicate with each other with the porous body being in at least the vicinity of a surface of the first electrode. The second electrode is spaced apart from the first electrode. The functional element is configured to measure a difference in electric potential between the first electrode and the second electrode. The sensor device is configured to measure a state of a site to be measured based on the difference in electric potential as measured by the functional element.

A sensor device includes a first electrode, a second electrode, a gap forming member and a functional element. The first electrode is composed of a first metallic material. The second electrode is spaced apart from the first electrode, and composed of a second metallic material. The gap forming member is arranged with a gap being formed between the gap forming member and a portion of a surface of the first electrode. The functional element is configured and arranged to measure a difference in electric potential between the first electrode and the second electrode so that a state of a measurement site to be measured is measured based on the difference in electric potential as measured by the functional element.

Corrosion detection sensor device having coating film and measurement method

A method of manufacturing a semiconductor device, comprises; a) forming a SiGe layer on a substrate; b) forming a Si layer on the SiGe layer; c) forming a groove that exposes the side surface of the SiGe layer by partly etching the Si layer and the SiGe layer; and d) forming a hollow portion between the substrate and, the Si layer by etching the SiGe layer via the groove. Step d) further comprises: forming a part of the hollow portion by supplying a new liquid including a fluorinated nitric acid solution to the substrate and etching the SiGe layer, removing the fluorinated nitric acid solution once from the hollow portion that is under formation; and etching the SiGe layer by refilling a new liquid including a fluorinated nitric acid solution to the hollow portion.

Method for manufacturing a semiconductor device

A semiconductor substrate comprising: a semiconductor base; dielectric layers of mutually different film thicknesses formed on the semiconductor base; and semiconductor layers of mutually different film thicknesses formed on the dielectric layers.

Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate, and method for manufacturing semiconductor device

A semiconductor device, includes: a semiconductor layer, arranged, via an insulation layer, on a region of a part of a semiconductor substrate; a first circuit block formed on the semiconductor layer; and a second and a third circuit blocks formed on the semiconductor substrate, isolated from each other by the first circuit block.

Semiconductor device having a first circuit block isolating a plurality of circuit blocks

A semiconductor device includes a substrate, a first insulating film, a first semiconductor layer disposed above the substrate with the first insulating film therebetween, a second semiconductor layer disposed above the first semiconductor layer with a second insulating film therebetween, a first conductivity type metal oxide semiconductor (MOS) disposed on at least one side surface of the first semiconductor layer, a second conductivity type MOS disposed on at least one side surface of the second semiconductor layer, a charge storage layer common to the first and second MOS transistors, and a control gate common to the first and second MOS transistors. The common charge storage layer is continuously provided from the side surface of the first semiconductor layer on which the first conductivity type MOS transistor is disposed to the side surface of the second semiconductor layer on which the second conductivity type MOS transistor is disposed.

CMOS semiconductor non-volatile memory device

A nonvolatile semiconductor memory device includes a gate electrode provided on a channel region of a semiconductor layer and a floating gate provided on a back side of the semiconductor layer with a first insulating layer interposed therebetween.

Nonvolatile semiconductor memory device

A method for manufacturing a piezoelectric oscillator includes the steps of: forming a first semiconductor layer above a substrate; forming a second semiconductor layer above the first semiconductor layer; forming a first opening section that exposes the substrate by removing the second semiconductor layer and the first semiconductor layer in an area for forming a support section; forming the support section in the first opening section; forming a driving section that generates flexing vibration in an oscillation section above the second semiconductor layer; patterning the second semiconductor layer to form the oscillation section having the supporting section as a base end and another end provided so as not to contact the supporting section, and a second opening section that exposes the first semiconductor layer; and removing the first semiconductor layer through a portion exposed at the second opening section by an etching method, thereby forming a cavity section at least below the oscillation section, wherein the step of forming the driving section includes the steps of forming a first electrode, forming a piezoelectric layer above the first electrode, and forming a second electrode above the piezoelectric layer.

Piezoelectric oscillator and method for manufacturing the same

A semiconductor device includes a semiconductor layer formed partially on a semiconductor substrate by epitaxial growth, an embedded oxide film embedded between the semiconductor substrate and the semiconductor layer, first and second gate electrodes disposed on sidewalls of the semiconductor layer, a source layer formed in the semiconductor layer and disposed in the first gate electrode, and a drain layer formed in the semiconductor layer and disposed in the second gate electrode, wherein the sidewalls of the semiconductor layer are film-forming surfaces of the epitaxial growth.

Semiconductor device and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

Method for manufacturing semiconductor device

A semiconductor device includes a first insulator formed at a part under a semiconductor layer, a second insulator formed under the semiconductor layer in an arranged manner avoiding the first insulator and having a relative dielectric constant different from that of the first insulator, a backgate electrode formed under the first and second insulators, a gate electrode formed on the semiconductor layer, and a source layer and a drain layer formed in the semiconductor layer to be respectively arranged on opposite lateral sides of the gate electrode.

Growing community of inventors

Chino, Japan

Juri Kato