International Business Machines Corporation

Jurgen Kempf

Georg Kraus

Holger Hinkel

Gerhard E Schmid

Gerhard Kaus

Werner Zapka

Karl Asch

Volker Heinrich

Joachim H Keyser

Friedrich Ertingshausen

Christine Brandeis

Manfred Schrader

Hans-Georg Nauth

Ulrich Ku/ Nzel

A mask for radiation beam lithography is formed from a semiconductor wafer by thinning a region into a membrane with a hole pattern defining the pattern of the mask. The membrane is doped with a tensile stress-generating material so that minimum doping exists at the periphery of the membrane with the maximum at its center. The difference in doping between the periphery and the center is chosen so that when the mask is irradiated with a given beam current intensity, the membrane is tension-free. To make a mask in the wafer, a hole pattern is formed by etching holes in the membrane or by depositing a layer on the membrane. The wafer is thinned from the opposite surface until the holes in the hole pattern are throughholes or until the desired thickness is reached. The membrane is doped with tensile-stress-generating material using ion implantation or diffusion proportionally to the temperature distribution existing in the membrane during irradiation with exposure beams.

Mask for ion, electron or X-ray lithography and method of making it

A magnetic head slider consisting of a mixed ceramic made of aluminum oxide/titanium carbide has on its sliding side adjacent a magnetic record carrier a thin layer from which the titanium carbide component has been removed. The titanium carbide component preferably is removed by preferential reactive ion etching in a CF.sub.4 plasma. The magnetic head slider with its sliding surface thus modified exhibits greatly improved sliding properties compared with sliders of the same material having a non-modified sliding surface.

Magnetic head slider of ceramic material

A reactor comprising a plate-shaped cathode that is horizontally arranged and connected to an alternating voltage, in a ground connected casing, and gas inlet and gas outlet lines. The cathode is equipped with means for generating local magnetic fields restricted to the region of the individually supported substrates. The cathode can be furthermore have holes or openings in which are arranged substrate holders shiftable or movable vertically to relate to the substrate surface. The substrates are etched in the reactor by means of a plasma which is produced from at least one reactive gas. Each substrate is exposed to at least one local magnetic field. If a mostly chemically etchable material is to be etched in the presence of a mostly physically etchable material, to a much stronger extent than the latter, the advantageous etching speed ratio can be set in that the substrates are additionally raised over the cathode surface.

Reactor for reactive ion etching and etching method

Disclosed is a simplified method of producing semiconductor device structures in an integrated technology using at least one ion implantation step. Implantation of the doping ions into a silicon wafer, for example, for producing a subcollector or an emitter, is not effected, as previously, in an ultra-high vacuum atmosphere through a thin protective layer of silicon dioxide which is applied by a separate thermal oxidation step prior to implantation, but the doping ions are directly implanted into the bare silicon wafer. The latter implantation is effected in an atmosphere of increased partial pressure of oxygen. Enhanced diffusion of the oxygen adsorbed at the surface occurs into the vacancies which are generated by the implanted doping ions close the surface of the silicon wafer. In this manner a silicon dioxide protective layer is formed already in the initial stage of ion implantation. As a result one process step can be saved, namely, the production of the protective layer by thermal oxidation prior to ion implantation.

Method of making semiconductor device structures by means of ion

Growing community of inventors

Schonaich, Germany

Jurgen Kempf