Honda Giken Kogyo Kabushiki Kaisha

Kyoto University

Nissin Ion Equipment Co., Ltd.

Nihon Denshizairyo Kabushiki Kaisha

Nissin High Voltage Co., Ltd.

Other

Nissin Electric Co., Ltd.

Junzo Ishikawa

Toshinori Takagi

Takashi Iwasa

Masao Okubo

Shigeki Sakai

Dan Nicolaescu

Kiyoshi Sugaya

Koji Matsuda

Yasuhito Gotoh

Shuichi Nogawa

Yoshio Matsubara

Hideaki Takara

Toshiaki Sasai

To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.

Ion beam irradiation device and method for suppressing ion beam divergence

An ion beam irradiating apparatus has a field emission electron sourcewhich is disposed in a vicinity of a path of the ion beam, and which emits electrons. The field emission electron sourceis placed in a direction along which an incident angle formed by the electronsemitted from the electron sourceand a direction parallel to the traveling direction of the ion beamis in the range from &#x2212;15 deg. to +45 deg. (an inward direction of the ion beamis +, and an outward direction is &#x2212;).

Ion beam irradiating apparatus, and method of producing semiconductor device

An electric element is formed of a deposited film containing cesium (Cs) and has a plurality of conical projections on its surface. The projections are formed of cesium oxide and have an average height h in a range of 10 nm&#x2266;h&#x2266;500 nm. The electronic element is used as a cold cathode element, and has a high practicality, and for example, emits electrons sufficiently even with a low voltage applied thereto.

Electronic element

To provide a cold cathode element, which has a high practicability and is capable of emitting electrons sufficiently even at a low voltage applied. The cold cathode element emits electrons by application of an electric field to the element and is formed of an amorphous carbon film, the refractive index n of a surface of the film being equal to or larger than 2.5.

Cold cathode element

A cold cathode element for emitting an electron on application of an electric field. The element includes a diamond carbon film having a half width Hw of a photoelectron spectrum of a C,electron using an X-ray photoelectron spectroscopy, of 1.72 eV or more. The cold cathode element has the function of sufficiently emitting electrons even by applying a low voltage, and thus the element has high practical utility.

An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion plasma in the main chamber. Multiple auxiliary plasma chambers may be used and each may be separately regulated. Protective plates, screens, and coatings may be provided to protect the ion plasma of the main chamber from sputtering a facing wall of the auxiliary plasma chamber.

Ion source having auxillary ion chamber

An ion emmisive head for fusing a metal to emit ion beam is disclosed, wherein a fused metal is designed to infiltrate through a porous portion for flow control and to reach an extremely sharpened needle which is provided after infiltration and wherefrom the fused metal is converted to ion beam by electrical action. Thus, ionized metallic beam is rendered to have smaller width or more focused ray. Submicron technology used in the IC industry, for instance, desires far thinner, finer beam line to attain more compact circuits, which need will be responded in the present invention by disposing a tipping needle to extend out of a porous tip portion which receives the fused metal from melting zone. Appropriate combination of sharpness at the needle point and provision of a beam guiding electrode in neighborhood of an emitting needle point enable to produce about 0.1 micron beam width by prevention of plasma ball which will otherwise diffuse the emitted beam.

Ion emmissive head and ion beam irradiation device incorporating the same

An ion source having a sintered metal head for ionizing various substances is disclosed. This ion source comprises a container made of a material which has a higher fusing point than that of the substance which is to be ionized, and a tip formed of a molded sintered metal of a higher fusing point than that of the substance which is to be ionized. The head is formed into a nearly conical shape and has a porosity capable of allowing the substance which is to be ionized to infiltrate therethrough in the molten state and the tip of the head is positioned at the opening of one end of the container for the ionizable material and arranged in such a manner that it protrudes beyond the end of the container.

Fused metal ion source with sintered metal head

A microwave ion source comprising a discharge chamber provided with an ion source seed material inlet and an ion outlet, a means for radiating microwaves in said discharge chamber, a means for applying a magnetic filed to the inside of said discharge chamber, a means for supplying ion source seed material to said discharge chamber through said ion source seed material inlet and an ion extraction electrode, said ion extraction electrode being made of magnetic material having a resistivity of less than 10.sup.6 .OMEGA.cm and a permeability of more than 5. The present microwave ion source has an improved ion current efficiency.

Microwave ion source

A negative-ion source comprising means for discharging alkaline metal for discharging neutral alkaline metal particles together with alkaline metal ion particles; an electrode for generating negative ions which can serve as an extraction electrode for extracting said alkaline metal ion particles and a target bombarded with said alkaline metal ion particles and which provides with a hold for holding negative-ion seed material in the portion bombarded with said alkaline metal ion particles and an aperture for letting out negative-ion particles; and a negative-ion extraction electrode for said negative-ion particles. The present negative-ion source has an improved ion current efficiency and is compact size.

Growing community of inventors

Kyoto, Japan

Junzo Ishikawa