Hitachi, Ltd.

Hitachi-High-Technologies Corporation

Hitachi Ulsi Systems Co., Ltd.

Other

Junzo Azuma

Satoshi Tomimatsu

Tohru Ishitani

Aritoshi Sugimoto

Hidemi Koike

Isamu Sekihara

Kaoru Umemura

Akira Shimase

Yuichi Hamamura

Toshie Yaguchi

Yasuhira Nagakubo

Ruriko Tsuneta

Tohru Ando

Hiroyasu Kaga

Masashi Sasaki

Akira Watabe

Disclosed is a charged particle radiation apparatus capable of capturing a change in a sample due to gaseous atmosphere, light irradiation, heating or the like without exposing the sample to atmosphere. The present invention relates to a sample holder provided with a sample stage that is rotatable around a rotation axis perpendicular to an electron beam irradiation direction, the sample holder being capable of forming an airtight chamber around the sample stage. A sample is allowed to chemically react in any atmosphere, and three-dimensional analysis on the reaction is enabled. A sample liable to change in atmosphere can be three-dimensionally analyzed without exposing the sample to the atmosphere.

Charged particle radiation apparatus, and method for displaying three-dimensional information in charged particle radiation apparatus

A specified position in an array structure in which a reference pattern is displayed repetitively through reference pattern counting is identified. In an array structure image, the pattern detection estimating area generated from a starting point, the address of the starting point, and a unit vector are compared with a pattern detected position found in pattern matching with the reference pattern image, to execute pattern counting while determining correct detection, oversights, wrong detection, etc. Array structure images are photographed sequentially while moving the visual field with the use of an image shifting deflector to continue the pattern counting started at the starting point to identify the ending point specified with an address. If the ending point is not reached only with use of the image shifting deflector, the visual field moving range of the image shifting deflector is moved with use of a specimen stage.

Specified position identifying method and specified position measuring apparatus

A charged particle gun includes: a charged particle source; a first extracting electrode arranged in such a manner that a distance between the charged particle source and the first extracting electrode is fixed; a second extracting electrode located on the side opposite to the charged particle source with respect to the first extracting electrode, the electrode being arranged in such a manner that a distance between the first extracting electrode and the second extracting electrode is adjustable; and an earth electrode located on the side opposite to the first extracting electrode with respect to the second extracting electrode, the electrode being arranged in such a manner that a distance between the second extracting electrode and the earth electrode is fixed; wherein the first extracting electrode is equal in potential to the second extracting electrode.

Charged particle beam apparatus using an electrostatic lens gun

A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow () appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

Probe driving method, and probe apparatus

Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (), and fixed type conductor probe means () that is relatively fixed to an FIB generator (). Positions of probe tips are superimposed to an SIM image and displayed on a display unit ().

Apparatus for inspecting defects of devices and method of inspecting defects

A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage ( ), and fixed type conductor probe means ( ) that is relatively fixed to an FIB generator ( ). Positions of probe tips are superimposed to an SIM image and displayed on a display unit ( ).

Growing community of inventors

Hitachiota, Japan

Junzo Azuma