Samsung Sdi Co., Inc.

Samsung Electronics Co., Ltd.

Junyoung Jang

Jin-Hee Bae

Jinwoo Seo

Kunbae Noh

Taeksoo Kwak

Huichan Yun

Jun Sakong

Jingyo Kim

Byeonggyu Hwang

Jongkeun Kim

Kwen-Woo Han

Jiho Lee

Taejeong Kim

Yoong Hee Na

Haneul Kim

Garam Lee

Jusung Maeng

Sooyeon Sim

Yonggoog Kim

Woo Han Kim

Byeong Gyu Hwang

Yoonyoung Koo

Jeongmi Lee

Eunseon Lee

An electronic device includes a display, a first housing, a second housing and a hinge assembly configured to connect the first housing and the second housing, and having a pair of hinge axes. The hinge assembly includes a hinge bracket including an intermediate protrusion formed to protrude in a direction of a middle axis perpendicular to the pair of hinge axes, a pair of hinge structures connected to the hinge bracket to be rotatable about the pair of hinge axes, and an intermediate member including a through-hole into which the intermediate protrusion is inserted, to be rotatable about the middle axis with respect to the hinge bracket. The intermediate protrusion also includes a protrusion base having a first radius, and a head including a projection which is formed on the protrusion base and which has a second radius greater than the first radius.

Electronic device with hinge assembly

Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Composition for forming silica layer, manufacturing method for silica layer, and silica layer

A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiOconversion rate of greater than about 0 and less than or equal to about 15. The SiOconversion rate is represented by: SiOconversion rate=(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%)&#x2212;(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%).

Composition for forming silica layer, silica layer, and electronic device

A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.

Method of forming patterns, patterns formed according to the method, and semiconductor device including the patterns

A composition for forming a silica layer includes a silicon-containing polymer and a mixed solvent including at least two solvents, wherein the mixed solvent has a surface tension of about 5 mN/m to about 35 mN/m at a temperature of about 25&#xb0; C.

Composition for forming silica layer, method for manufacturing silica layer and silica layer

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Suwon-si, South Korea

Junyoung Jang