Samsung Electronics Co., Ltd.

Junyong Park

Ilhan Park

Byungsoo Kim

Minseok Kim

Doohyun Kim

Donghun Shin

Hyunggon Kim

Youngah Lee

Sungmin Joe

Jisu Kim

Seokcheon Baek

Younghwan Son

Dahye Shim

Daewung Kim

Sungjun Hwang

Jiyeon Ma

Sangbum Yun

Miram Kwon

Suyong Kim

Jiho Lee

Sungdo Son

Hyungmin Yook

Sungdo Ban

A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify operation based on a first and second condition, respectively, wherein each program and verify operation includes generating a program voltage and a bit line voltage by a voltage generator included in the non-volatile memory device and providing the program voltage and the bit line voltage to the word line and the bit line, respectively, wherein voltage levels and voltage application times of each program voltage and bit line voltage correspond to the first condition or the second condition, respectively, wherein the first condition is different from the second condition.

Non-volatile memory device and method for programming a non-volatile memory device

Provided is a three-dimensional semiconductor memory device including a first substrate that includes a cell array region and a connection region; first and second electrode layers that are sequentially stacked and spaced apart from each other on the first substrate, and an end portion of the first electrode layer and an end portion of the second electrode layer are offset from each other on the connection region; a first cell contact penetrating the second electrode layer and the first electrode layer such as to be connected to the second electrode layer on the connection region; and a first contact dielectric pattern between the first cell contact and the first electrode layer. The first cell contact includes columnar part that vertically extends from a top surface of the first substrate, and a connection part that laterally protrudes from the columnar part and contacts the second electrode layer.

Three-dimensional semiconductor memory device

A method of testing a suspend operation, the method including: determining whether to transfer a suspend sampling signal to a suspend command circuit at a time point prior to each of a plurality of suspend operation time points stored in a sequence operation circuit; transferring the suspend sampling signal from the sequence operation circuit to the suspend command circuit; generating an internal suspend operation command based on the suspend sampling signal; transferring the internal suspend operation command from the suspend command circuit to the sequence operation circuit; performing suspend operations for all the plurality of suspend operation time points in response to the internal suspend operation command; and determining whether the suspend operations are performed at all of the suspend operation time points.

Method of testing a suspend operation

A memory device for improving the speed of a program operation and an operating method thereof is provided. The memory device includes a memory cell array including a plurality of memory cells, a voltage generator configured to generate voltages for one or more program operations and a verify operation performed on the plurality of memory cells, a control logic configured to perform a control operation on the plurality of memory cells so that a first program and a second program loop are performed, a second program operation being performed based on a compensation voltage level determined based on a result of the first verify operation, and a plurality of bit lines connected to the memory cell array, wherein the first verify operation includes first even sensing and second even sensing on even-numbered bit lines, and first odd sensing and second odd sensing on odd-numbered bit lines.

Memory device for improving speed of program operation and operating method thereof

In a method of reducing reliability degradation of a nonvolatile memory device, the nonvolatile memory device in which initial data having an initial threshold voltage distribution is stored in a plurality of memory cells connected to a plurality of wordlines is provided. Before a first process causing reliability degradation is performed, a first write operation is performed such that first data having a first threshold voltage distribution is stored into memory cells connected to first wordlines. The first wordlines have a degree of reliability degradation less than a reference value. Before the first process is performed, a second write operation is performed such that second data having a second threshold voltage distribution is stored into memory cells connected to second wordlines. The second wordlines have a degree of reliability degradation greater than or equal to the reference value.

Method of reducing reliability degradation of nonvolatile memory device, nonvolatile memory device using the same and method of testing nonvolatile memory device using the same

Non-volatile memory device and method for programming the same using multiple program operations under different conditions

An electronic device and a control method thereof are provided. The electronic apparatus includes a voice input unit, a display, a memory storing at least one instruction, and a processor configured to execute the at least one instruction. The processor is configured to: based on a voice of a user being input through the voice input unit, recognize the user who has uttered the voice by comparing the voice with a plurality of pre-registered voices; and control the display to display an indicator corresponding to the recognized user.

Electronic device and control method therefor

A display apparatus and a method of controlling the same are provided. The display apparatus includes: a signal receiver configured to receive a video signal of content; a display; and a processor configured to obtain a video photographing a surrounding of the display apparatus, identify a first color representing the obtained video and at least one second color related to the first color, and allocate the identified first color or second color to at least some area of the content or display the allocated first color or second color on the display. Thereby, it is possible to display content in a color fitting a space well.

Display device and control method of same

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Suwon-si, South Korea

Junyong Park