Changxin Memory Technologies, Inc.

Junyi Zhang

Yexiao Yu

Songmei Shen

A method for manufacturing a semiconductor structure includes the following operations. A support layer and a first dielectric layer that are stacked are formed on the substrate, in which first trenches are formed in the support layer and the first dielectric layer. A first blocking layer covering sidewalls and bottoms of the first trenches and a top surface of the first dielectric layer is formed. The first blocking layer and the first dielectric layer are etched to form etching holes. The first dielectric layer exposed by the etching holes is removed to form cavities. A second blocking layer is formed, which seals the etching holes at the tops of the cavity. Part of the first blocking layer in the first trenches is removed so that the first trenches expose the substrate. Wires are formed in the first trenches.

Semiconductor structure and method for manufacturing same

The present application provides a semiconductor structure and a preparation method thereof, including: a substrate; a trench; a bit line contact structure; a bit line structure; a bit line protection structure, the bit line protection structure including a top dielectric layer and a sidewall structure, the top dielectric layer is located on the bit line structure and forms a laminated structure together with the bit line structure; the sidewall structure covers part of sidewalls of the laminated structure on the substrate, the sidewall structure has a first air gap; an isolation pattern structure, the isolation pattern structure has a second air gap, the isolation pattern structure extends along a second direction, the second direction intersects with the first direction, to form capacitance contact hole between the adjacent bit line protection structures and the adjacent isolation pattern structures.

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Hefei, China

Junyi Zhang