Samsung Electronics Co., Ltd.

Junyeong Lee

Youngseok Kim

Kuntack Lee

Minkyu Park

Bongjin Kuh

Sukjin Chung

Beomseok Kim

Pyung Moon

Soonwook Jung

Insun Yi

A thin film formation apparatus includes a chamber, a platen disposed within the chamber, a heater configured to heat the platen within the chamber, a gas inlet communicating with an interior of the chamber and configured to supply a reducing gas and inert gas to the interior of the chamber, a target disposed within the chamber and spatially separated from the platen, and a microwave plasma source disposed adjacent to the target. The reducing gas includes at least one of hydrogen (H) and deuterium (D).

Thin film formation apparatus and method using plasma

Disclosed are method and apparatus for forming a thin layer. The method for forming the thin layer comprises providing a substrate including patterns, forming a bonding layer on the substrate covering an inner surface of a gap between the patterns, forming a preliminary layer on the bonding layer filling the gap; and thermally treating the preliminary layer to form the thin layer. The bonding layer is a self-assembled monomer layer formed using an organosilane monomer. The preliminary layer is formed from a flowable composition comprising polysilane.

Method and apparatus for forming a thin layer

Growing community of inventors

Bucheon-si, South Korea

Junyeong Lee