Tokyo Ohka Kogyo Co., Ltd.

JunYeob Lee

Tsuyoshi Nakamura

Kazuishi Tanno

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including at least one acid generator (B1) represented by general formula (b1) shown below, at least one acid generator (B2) represented by general formula (b2) shown below, and at least one acid generator (B3) represented by general formula (b3) shown below (wherein IV to Reach independently represents a cyclic group which may have a substituent, a chain alkyl group, or a chain alkenyl group; Yrepresents a single bond or a divalent linking group containing an oxygen atom; Mto Mrepresents a monovalent organic cation; n represents an integer of 1 to 4; m represents an integer of 0 to 4; provided that, when m is 0, the carbon atom adjacent to the sulfur atom within Rhas no fluorine atom bonded thereto).R&#x2014;Y&#x2014;(CF)&#x2014;SOM&#x2003;&#x2003;(b1)R&#x2014;(CH)&#x2014;SOM&#x2003;&#x2003;(b2)R&#x2014;COOM&#x2003;&#x2003;(b3)

Resist composition and method of forming resist pattern

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, which includes a polymeric compound having at least two specific structural units.

Resin composition and method of forming resist pattern

A resist composition which generates an acid through exposure and whose solubility in a developer changes by the action of an acid. The resist composition contains a polymer compound having at least two kinds of specific constituent units. A resist pattern forming method, including forming a resist film on a support using the resist composition, subjecting the resist film to exposure, and forming a resist pattern through patterning by developing the resist film having undergone exposure by using a developer.

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Incheon, South Korea

JunYeob Lee