Canon Kabushiki Kaisha

Hitachi Displays, Ltd.

Junya Tamaki

Nobuhiko Sato

Takashi Moriyama

Masami Iseki

Takuro Yamazaki

Masahiro Fushimi

Masaki Kurihara

Takehiro Toyoda

Atsushi Kanome

Naoki Tokuda

Toshihiko Mimura

Nobutaka Ukigaya

Yojiro Matsuda

Kohei Nagayama

Kouji Ikeda

Satoshi Ogawa

Shingo Kitamura

Kaoru Okamoto

Ryo Yoshida

Takeshi Aoki

Manabu Otsuka

Yasushi Iwakura

Takafumi Miki

Koji Hara

Keita Torii

Yasuhiro Kawabata

Nozomu Izumi

Kazuya Igarashi

Kosuke Asano

Masahiro Tamura

Norihiko Nakata

Takeshi Izumida

A semiconductor device includes a plurality of wirings each having a damascene structure on a semiconductor layer, wherein the plurality of wirings includes a first wiring and a second wiring adjacent to each other, wherein the first wiring includes, along a direction in which the first wiring extends, a first portion, a second portion, and a third portion located between the first portion and the second portion, and wherein a width of the third portion is larger than each of a width of the first portion and a width of the second portion.

Semiconductor device and method for manufacturing semiconductor device

A photoelectric conversion device in the present disclosure includes a first trench extending inside a semiconductor substrate from a first face of the semiconductor substrate between a first photoelectric conversion portion and a second photoelectric conversion portion arranged in a first pixel and a second trench extending from a second face of the semiconductor substrate between the first pixel and a second pixel, and the end on the second face side of the first isolation portion is located closer to the second face side than the end on the first face side of the second isolation portion.

Photoelectric conversion device having a semiconductor substrate with first, second and third photoelectric conversion portions

A solid-state imaging device has a first area in which a plurality of pixels are provided, a second area provided on an outer side with respect to the first area, and a third area provided on the outer side with respect to the second area. An inner-lens layer provided over the first to third areas has an opening. An insulating film provided below the inner-lens layer also has an opening.

Solid-state imaging device and method of manufacturing the same

A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.

Semiconductor device and semiconductor device manufacturing method using patterning and dry etching

An organic EL displaying apparatus which suppresses a defective display caused by a leak current at a time when an emission period controlling transistor is off is provided. The organic EL displaying apparatus comprises a plurality of pixels each of which includes an organic EL element, a power supply line, a driving transistor and the emission period controlling transistor, a data line, and a control line. In this apparatus, in a certain one of the pixels, a resistance RILM between source and drain electrodes of the emission period controlling transistor in an off state of the emission period controlling transistor, and a resistance RDr between source and drain electrodes of the driving transistor in a state that a minimum gradation displaying data voltage has been applied to a gate electrode of the driving transistor satisfy RILM&#x2267;RDr.

Organic electroluminescence displaying apparatus which suppresses a defective display caused by a leak current at a time when an emission period controlling transistor is off

In a light-emitting apparatus including a cap layer disposed on a second electrode and a contact portion, which is disposed in an external region outside the light-emitting region and which electrically connects the second electrode to the drive circuit, the formation end of the cap layer is located in the side nearer to the light-emitting region than is the formation end of the second electrode.

Light-emitting apparatus

A dimming method of an organic EL displaying apparatus having a displaying unit constructed by combining pixels each having a substrate, an organic EL element formed over the substrate, a power supply line for supplying a power source to the organic EL element, and at least one TFT provided on a wiring path from the power supply line to the organic EL element. The TFT has a semiconductor layer which is arranged between a source electrode and a drain electrode and is electrically connected to the source electrode and the drain electrode. A laser beam is irradiated from a downward direction of the substrate to a region which does not overlap a gate electrode, the source electrode, the drain electrode, and the wiring layer when seen as a plan view in a plane region where the semiconductor layer is provided.

Dimming method of organic EL displaying apparatus and organic EL displaying apparatus

Provided is a method of manufacturing an organic light emitting device capable of suppressing a patterning defect caused by a residue of a release layer, the method including: a first organic compound layer formation step; a first protective layer formation step; a second protective layer formation step; a second protective layer processing step; a first protective layer processing step; a first organic compound layer processing step; a second organic compound layer formation step; and a lift-off step in which the pattern of the second protective layer obtained in the second protective layer processing step is formed also in a second region.

Method of manufacturing organic light emitting device

Light is prevented from being emitted from a region that overlaps a contract hole in a structure in which light emitting devices are stacked. A stacked organic electro-luminescent display apparatus includes a contact hole that electrically connects a first electrode or a second electrode to a driving circuit. The first or second electrode and a second organic compound layer are provided in the contact hole, and the second organic compound layer existing in the contact hole does not emit light.

Organic electro-luminescent display apparatus and imaging apparatus including the same

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Chiba, Japan

Junya Tamaki