Kyocera Corporation

Junya Nishii

Toru Fukano

Tsuyoshi Nakai

Yoshihiro Ookubo

Hiroaki Ochiai

Hiroyuki Tanaka

Tetsuya Kishino

Kenji Yamamoto

Takanori Ikuta

Kyohei Kobayashi

Michiaki Nishimura

Kazuhiro Otsuka

Masahisa Shimozono

An SAW device () has a piezoelectric substrate () propagating acoustic waves, and a comb-shaped electrode () arranged on a first surface () of the piezoelectric substrate (). The SAW device () has a columnar terminal () located on the first surface () and electrically connected to the comb-shaped electrode (), and a cover member () covering the a side surface of the terminal (). The terminal () comprises, in a first region in the height direction of height thereof, a larger diameter on the side of the first surface () compared with the diameter on the side opposite to the first surface ().

Acoustic wave device and method for manufacturing same

A SAW device () comprises a substrate (); SAW elements () on a first main surface () of the substrate (); first lines (intermediate lines () and output side lines ()) that are disposed upon the first main face () and connected to the SAW elements (); an insulator () that is layered upon the first lines; second lines (a second ground line () and a third ground line ()) that are layered upon the insulator () and configure three-dimensional wiring parts () with the first lines; and a cover () that seals the SAW elements () and the three-dimensional wiring parts (). Wiring spaces (), formed between the first main face () and the cover (), houses the three-dimensional wiring parts (), without housing the SAW elements ().

Acoustic wave device

A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.

Acoustic wave element and acoustic wave device using same

A SAW device () has a substrate () configured to propagate acoustic waves; an IDT electrode () on a first main surface () of a substrate (); and an electrode pad () on the first main surface () electrically connected to the IDT electrode (). The SAW device () also has a terminal with a pillar-shape (column part ()) setted up on the electrode pad (); a third conductive layer () extending from a side surface of the column part (); and a cover () forming a vibration space (S) above the IDT electrode () and covering the side surface of the column part (), and the third conductive layer ().

An SAW device () has a piezoelectric substrate () propagating acoustic waves, and a comb-shaped electrode () arranged on a first surface () of the piezoelectric substrate (). The SAW device () has a columnar terminal () located on the first surface () and electrically connected to the comb-shaped electrode (), and a cover member () covering a side surface of the terminal (). The terminal () comprises, in a first region in the direction of height thereof, a larger diameter on the side of the first surface () compared with the diameter on the side opposite to the first surface ().

Provided is a highly reliable acoustic wave device wherein deterioration of electrical characteristics due to deformation of a protective cover is suppressed. A method for manufacturing such acoustic wave device is also provided. The acoustic wave device has a piezoelectric substratepropagating an acoustic wave; an excitation electrode arranged on a first main surface of the piezoelectric substrate; a columnar outside connection-use electrodeelectrically connected to the excitation electrode; a protective coverhaving a hollow accommodating spacein which the excitation electrode is accommodated on the first main surface; and a conductive layerconnected to the electrodeon the protective cover

Acoustic wave device comprising an inter-digital transducer electrode

A small and highly reliable acoustic wave device and a method for production of the same will be provided. The acoustic wave device has a piezoelectric substrate; a SAW elementon one main surface of the piezoelectric substrate; an outside connection-use conductorformed on the one main surface of the piezoelectric substrateand electrically connected to the SAW element; a columnar electrodeon the outside connection-use conductor; and a protective coverdefining inner walls of a vibration spacefor vibration of the SAW elementand planarly surrounding a side surface of the columnar electrode

Acoustic wave device and method for production of same

A method for fabricating a small and low-profile surface acoustic wave device which can be formed collectively by a wafer process without causing deterioration in characteristics is provided. The surface acoustic wave device has a piezoelectric substrate, an IDTformed on one major surface of the piezoelectric substrateand having at least one comb-shaped electrode, and a protective coverforming a hollow containing spacewith the one major surface by covering the IDTabove the one major surface. The protective coveris provide with a through holeand composed, at least partially, of a photocurable material containing an acid generator which contains fluorine.

Growing community of inventors

Kyoto, Japan

Junya Nishii