Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Junya Muramatsu

Masataka Deguchi

Katsuhiro Kutsuki

Keita Kataoka

Isao Aoyagi

Takashi Tominaga

Takashi Kohyama

Ryosuke Okachi

Main cells that constitute a semiconductor element having a trench gate structure include first cells, and second cells having a structure in which gate insulating films are more easily broken by energization than those in the first cells, and the number of which is smaller than that of the first cells. At a time of driving the semiconductor element, a common gate drive voltage is applied to gate electrodes of the first cells and the second cells. An electrical characteristic is measured to detect failure of the second cells due to energization at the time of driving. The gate electrodes of the failed second cells are electrically isolated from the gate electrodes of the first cells so that the gate drive voltage is not applied to the failed second cells. The failure of the first cells is predicted based on the failure of the second cells.

Method for predicting failure of semiconductor device, and semiconductor device

An occupant assist apparatus () has: a receiving device () for receiving an occupant information relating to an occupant of a vehicle; an estimating device () for estimating, on the basis of the occupant information, at least one of a desire of the occupant to urinate and a desire of the occupant to defecate in a future than a timing when the occupant information is received; and an executing device () for executing an occupant assist on the basis of a result of an estimation by the estimating device.

Occupant assist apparatus

Growing community of inventors

Nagakute, Japan

Junya Muramatsu