Kabushiki Kaisha Toshiba

Kioxia Corporation

Toshiba Memory Corporation

Kloxia Corporation

Junya Matsuno

Tetsuro Itakura

Masanori Furuta

Masaru Koyanagi

Ryo Fukuda

Kensuke Yamamoto

Kenro Kubota

Masato Dome

Kei Shiraishi

Kazuhiko Satou

Takafumi Yamaji

Akihide Sai

Masami Masuda

Yuui Shimizu

Hidenori Okuni

Hideo Kasami

Tsuyoshi Kogawa

Yasuhiro Hirashima

Toshiyuki Kouchi

Masatoshi Kohno

Kazuyoshi Muraoka

Kentaro Yoshioka

Tomohiko Sugimoto

Yohei Hatakeyama

Naoya Waki

Masahiro Hosoya

According to one embodiment, a semiconductor memory device includes: first and second circuit units, a driver circuit, an input/output pad, first and second power supply pads, and first and second interconnects. The first interconnect is configured to provide coupling between the first circuit unit and the first power supply pad. The second interconnect is configured to provide coupling between the second circuit unit and the first power supply pad and have no electrical coupling to the first interconnect.

Semiconductor memory device

A device includes a memory cell array configured to store data; and a signal propagation circuit configured to propagate a signal between the memory cell array and a host. The signal propagation circuit includes a first inverted signal output circuit, a second inverted signal output circuit including an input terminal connected to i) an output terminal of the first inverted signal output circuit and ii) an output terminal of the second inverted signal output circuit, a third inverted signal output circuit including an input terminal connected to i) the output terminal of the first inverted signal output circuit and ii) the output terminal of the second inverted signal output circuit, and a fourth inverted signal output circuit including an input terminal connected to i) an output terminal of the third inverted signal output circuit and ii) an output terminal of the fourth inverted signal output circuit.

Memory device

A semiconductor device includes a first circuit configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level, the first voltage being higher than the second voltage. A second circuit is coupled to the first node and is configured to latch data based on a voltage of the first node; and a third circuit is coupled to the first node and is configured to output a third voltage to the first node while the first circuit is outputting the first voltage to the first node, and to output a fourth voltage to the first node while the first circuit is outputting the second voltage to the first node, the third voltage being lower than the first voltage, and the fourth voltage being higher than the second voltage.

Semiconductor device

A semiconductor memory device includes a memory cell array and a signal propagation circuit disposed on a propagation path of a signal or a control signal. The signal propagation circuit includes a first inverted signal output circuit; a second inverted signal output circuit including an input terminal connected to an output terminal of the first inverted signal output circuit; a third inverted signal output circuit including an input terminal connected to output terminals of the first inverted signal output circuit and the second inverted signal output circuit; a fourth inverted signal output circuit including an input terminal connected to an output terminal of the third inverted signal output circuit, and further including a terminal connected to output terminals of the third inverted signal output circuit and the fourth inverted signal output circuit.

A semiconductor storage device including an output pad, a first circuit connected to the output pad, a second circuit connected to the first circuit, a third circuit configured to output a first setting signal for controlling the first circuit accordance with a characteristic variation of the first circuit, and a fourth circuit configured to generate a second setting signal for controlling the second circuit in accordance with the first setting signal received from the third circuit and output the second setting signal to the second circuit.

Semiconductor storage device

According to an embodiment, a semiconductor device includes a first circuit, a second circuit, and a third circuit. The first circuit is configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level. The first voltage is higher than the second voltage. The second circuit is coupled to the first node and configured to latch data based on a voltage of the first node. The third circuit includes a first inverter. The first inverter includes a first input terminal coupled to the first node and a first output terminal coupled to the first node.

According to one embodiment, a semiconductor memory device includes: a memory cell array and a signal propagation circuit disposed on a propagation path of a signal or a control signal, wherein the signal propagation circuit includes: a first inverted signal output circuit; a second inverted signal output circuit including an input terminal connected to an output terminal of the first inverted signal output circuit; a third inverted signal output circuit including an input terminal connected to output terminals of the first inverted signal output circuit and the second inverted signal output circuit; a fourth inverted signal output circuit including an input terminal connected to an output terminal of the third inverted signal output circuit; and a fifth inverted signal output circuit including an input terminal connected to output terminals of the third inverted signal output circuit and the fourth inverted signal output circuit.

A non-volatile semiconductor memory device including: a first pad transmitting/receiving a data signal transmitted via a first signal line to/from a memory controller; a second pad transmitting/receiving a strobe signal transmitted via a second signal line to/from the memory controller, the strobe signal specifying a timing of transmitting/receiving the data signal; and a third pad receiving an output instruction signal via a third signal line from the memory controller, the output instruction signal instructing a transmission of the data signal; wherein the non-volatile semiconductor memory device outputs the data signal from the first pad to the memory controller, outputs the strobe signal from the second pad to the memory controller, performs a first calibration operation calibrating the data signal, and performs a second calibration operation calibrating the strobe signal, based on a toggle timing of the strobe signal associated with the output instruction signal.

Non-volatile semiconductor storage device

A semiconductor storage device includes: a first terminal, a plurality of first and second output buffers, a register, a plurality of first pre-drivers including a plurality of first transistors operating according to a first signal, and a plurality of second pre-drivers including a plurality of second transistors operating according to a second signal. A first output control circuit selects the first pre-drivers in accordance with a third signal obtained by conversion of the second signal. A second output control circuit selects the second pre-drivers in accordance with a fourth signal obtained by conversion the first signal. A third output circuit transmits an output signal to the first and second output circuits.

According to one embodiment, the amplifier circuit includes a first and second differential amplifier. The first differential amplifier includes first and second transistors, a first current source, and a second current source that is configured to supply a current to the first and second transistors via a first switch element. The second differential amplifier includes third and fourth transistors, a third current source, and a fourth current source that is configured to supply a current to the third and fourth transistors via a second switch element. A first signal is input to the first and third transistors. The first switch elements are controlled by third and fourth signals, respectively. The third signal and the fourth signal are complementary.

Amplifier circuit

A receiver has a receiving unit to receive a radio signal, a signal detector to detect a reception signal in each of a plurality of set periods shifted in time to be overlapped in a partial period, and a demodulating unit to perform demodulation processing based on the reception signal. The signal detector has a smoothing unit to smooth the output signal of the receiving unit in each of the plurality of set periods, a comparing unit to output a signal obtained by comparing a level of the smoothed signal, with a threshold value, and an initializing unit to initialize the signal smoothed by the smoothing processing unit, every time the comparing unit compares the smoothed signal with the threshold value, and the demodulating unit performs the demodulation processing based on the smoothed signal determined to be the threshold value or more by the comparing unit.

Receiver and radio communication device

An amplifying circuit according to an embodiment includes an input terminal, an output terminal, first and second operational amplifiers, first and second input impedance elements, first to third feedback impedance elements, and an adder. The first (second) operational amplifier includes an inversion input terminal connected to a first (third) node and an output terminal connected to a second (fourth) node. The first (second) input impedance element has one end connected to the input terminal and the other end connected to the first (third) node. The first (second) feedback impedance element has one end connected to the first (third) node and the other end connected to the second (fourth) node. The third feedback impedance element has one end connected to the first node and the other end connected to the fourth node. The adder adds output voltages of the first and second operational amplifiers.

Amplifying circuit, AD converter, integrated circuit, and wireless communication apparatus

An amplifier circuit has a sampling circuit to comprise a sampling capacitor which samples an input voltage and a plurality of switches, a quantizer to quantize an output voltage of the sampling circuit, a DA converter to output an analog signal depending on a quantization signal by the quantizer, and a feedback capacitor to feed the analog signal back to the output voltage of the sampling circuit.

Amplifier circuit, ad converter, wireless communication device, and sensor system

According to an embodiment, a power supply noise cancelling circuit includes a generator, a first multiplier, a subtractor and a digital-to-analog converter. The generator generates a sine wave signal. The first multiplier multiplies a digital input signal by a digital signal based on the sine wave signal to generate a first digital product signal. The subtractor subtracts a digital signal based on the first digital product signal from the digital input signal to generate a digital difference signal. The digital-to-analog converter performs a digital-to-analog conversion on the digital difference signal to obtain an analog output signal.

Growing community of inventors

Kawasaki, Japan

Junya Matsuno