Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Junya Matsunami

Yoshiaki Fukuzumi

Hideaki Aochi

Hiroyasu Tanaka

Masaru Kito

Ryota Katsumata

Masaru Kidoh

Megumi Ishiduki

Yosuke Komori

Ryouhei Kirisawa

Tomoko Fujiwara

Yoshimasa Mikajiri

Shigeto Oota

Yoshihisa Iwata

Mitsuhiro Noguchi

Kikuko Sugimae

Hiroyuki Kutsukake

Masayuki Ichige

Tomoo Hishida

Takuya Konno

A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Nonvolatile semiconductor memory device and method for manufacturing same

According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.

Nonvolatile semiconductor memory device and method for driving same

According to one embodiment, a semiconductor storage device includes a first wiring, a first resistance change element which is connected to the first wiring, a first nonlinear element which is connected to the first resistance change element, and a second wiring which is connected to the first nonlinear element. In a read operation for the first resistance change element, a voltage between the first wiring and the second wiring increases to a first voltage, and after the voltage between the first wiring and the second wiring increases to the first voltage, the voltage between the first wiring and the second wiring increases to a second voltage which is larger than the first voltage.

Semiconductor storage device

According to one embodiment, a magnetic device includes a first memory cell including a magnetoresistive effect element and a selector, the selector including titanium (Ti), germanium (Ge) and tellurium (Te).

Magnetic storage device having a memory cell including a magnetoresistive effect element and a selector which includes titanium (Ti), germanium (Ge) and tellurium (Te)

A nonvolatile semiconductor memory device according to an embodiment comprises: a memory cell array including a plurality of memory cells provided one at each of intersections of a plurality of first lines and a plurality of second lines and each storing data by a data storing state of a filament; and a control circuit configured to execute a write sequence that writes data to the memory cell, the write sequence including: a setting operation that applies a setting pulse having a first polarity to the memory cell; and a removing operation that applies a removing pulse having a second polarity opposite to the first polarity to the memory cell; and the control circuit, during execution of the write sequence, is configured to repeatedly execute the setting operation until the memory cell attains a desired data storing state, and then to execute the removing operation.

Method of writing data of a nonvolatile semiconductor memory device including setting and removing operations

Growing community of inventors

Kanagawa-ken, Japan

Junya Matsunami