Semiconductor Energy Laboratory Co., Ltd.

Junya Maruyama

Toru Takayama

Shunpei Yamazaki

Yumiko Ohno

Yuugo Goto

Hideaki Kuwabara

Yasuyuki Arai

Takuya Tsurume

Masakazu Murakami

Kazuo Nishi

Takeshi Fukunaga

Yumiko Fukumoto

Mayumi Mizukami

Eiji Sugiyama

Toshimitsu Konuma

Tomoyuki Aoki

Noriko Shibata

Tomoko Tamura

Naoto Kusumoto

Koji Dairiki

Mai Akiba

Yuusuke Sugawara

Jun Koyama

Atsuo Isobe

Takeshi Osada

Takanori Matsuzaki

Yoshitaka Dozen

Masafumi Morisue

Koichiro Tanaka

Kiyoshi Kato

Akihisa Shimomura

Aya Anzai

Hiroki Adachi

Toshiji Hamatani

Yasuhiro Jinbo

Daiki Nakamura

Gen Fujii

Kazuhiko Fujita

Susumu Okazaki

Hidekazu Miyairi

Masahiro Takahashi

Toshihiko Saito

Hironobu Shoji

Daiki Yamada

Akio Endo

Ryosuke Watanabe

Fumito Isaka

Hironobu Takahashi

Keiichi Ogura

Hisao Ikeda

Shingo Eguchi

Susumu Kawashima

Shinji Maekawa

Tomoya Aoyama

Yoshiaki Yamamoto

Akira Ishikawa

Keitaro Imai

Nozomu Sugisawa

Kyosuke Ito

Kaori Ogita

Yosuke Tsukamoto

Yuko Tachimura

Masataka Sato

Daisuke Furumatsu

Kyoichi Mukao

Etsuko Arakawa

Kouji Dairiki

Kei Takahashi

Hidekazu Takahashi

Hideaki Shishido

Tatsuya Arao

Yasuko Watanabe

Hirokazu Yamagata

Yoshitaka Moriya

Teruyuki Fujii

Nozomi Horikoshi

Kohei Ohshima

Display unevenness in a display panel is suppressed. A display panel with a high aperture ratio of a pixel is provided. The display panel includes a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer. The common electrode has a portion overlapping with the first pixel electrode with the first common layer and the first light-emitting layer provided therebetween, a portion overlapping with the second pixel electrode with the first common layer and the second light-emitting layer provided therebetween, a portion overlapping with the third pixel electrode with the second common layer and the third light-emitting layer provided therebetween, and a portion in contact with a top surface of the auxiliary wiring.

Display panel, display device, display module, and electronic device

A plurality of display panels having a curved surface are placed in a limited space. Two, or three or more display panels are combined to form one display region having a T-shaped outer edge as one screen, and a driver can curve part of the display panel as appropriate so that the driver can see the screen easily. A first display panel or a second display panel has flexibility and includes a position adjustment function of curving an end portion. That is, by curving part of the display panel, the user can see the display panel easily. The in-car design can also be varied.

Display device and manufacturing method thereof

Display panel, and display device, display module, and electronic device including display panel

There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer () and a second material layer () (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer () or an interface thereof.

Peeling method and method of manufacturing semiconductor device

To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

Semiconductor device and method for manufacturing the same

To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Vehicle, display device and manufacturing method for a semiconductor device

A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate ()) and a layer including the element (peeled layer ()) is filled with coagulant (typically an adhesive) that serves as a second bonding member (), and the substrate used as a form (third substrate ()) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer ()) by the coagulated adhesive (second bonding member ()) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

Semiconductor device and method of manufacturing the same

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layeris provided on the substrate, and further, the oxide layerbeing contact with the foregoing metal layer or nitride layeris provided, and furthermore, if the lamination film formation or the heat processing of 500&#xb0; C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layerby the physical means.

Semiconductor device and peeling off method and method of manufacturing semiconductor device

A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

Semiconductor device and manufacturing method thereof, delamination method, and transferring method

Growing community of inventors

Kanagawa, Japan

Junya Maruyama