Fujitsu Corporation

Junya Ikeda

Atsushi Tanaka

Shin Eguchi

Yoshihiro Nakata

Chikayoshi Kamata

Yutaka Shimizu

Hitoshi Kanai

Reiko Kondo

Keiichi Nagasaka

Hitoshi Kishi

Yoshihiko Seyama

Shinya Sasaki

Tsuyoshi Kanki

A semiconductor device with an antenna includes a heat sink having first and second surfaces, a semiconductor chip provided on the second surface and having a circuit surface, a wiring board having a laminate of alternately disposed insulating layers and interconnect layers, and covering side surfaces of the heat sink and the semiconductor chip and the circuit surface, and exposing the first surface, and an antenna provided on the wiring board. The wiring board includes a board connecting part provided on an opposite side from the antenna, a first interconnect electrically connecting the board connecting part and a first terminal provided on the circuit surface, and a second interconnect electrically connecting the antenna and a second terminal provided on the circuit surface.

Semiconductor device with antenna

A semiconductor device includes: a semiconductor substrate; an electrode pad disposed over a first face of the semiconductor substrate; a redistribution layer electrically connected to the electrode pad; a through hole disposed in the semiconductor substrate so as to extend from a second face opposite to the first face of the semiconductor substrate to the electrode pad; an electrically conductive film covering an inner wall of the through hole, and electrically connected to the electrode pad; an electrically conductive adhesive disposed on a side of the second face of the semiconductor substrate, and electrically connected to the electrode pad via the electrically conductive film; a heat radiating member bonded to the second face of the semiconductor substrate with the electrically conductive adhesive; and a filling member with which the through hole is filled, the filling member being lower in coefficient of thermal expansion than the electrically conductive adhesive.

Filling member between a heat sink and substrate

A wiring board includes a base board and a plurality of wiring layers formed of a resin insulating film on the base board, wherein at least one of the wiring layers includes a fine wiring, a barrier film, which is not in contact with the fine wiring, is formed at a more outer side from the base board than the wiring layer including the fine wiring, and different types of resin insulating films are used for a wiring layer at an inner side of the barrier film close to the base board and a wiring layer at an outer side of the barrier film, respectively.

Wiring board including multiple wiring layers

A magnetoresistive film is formed on the surface of a lower electrode layer in a method of making a current-perpendicular-to-the-plane structure magnetoresistive element. The magnetoresistive film includes a lower portion and an upper portion overlaid on the lower portion. The lower portion includes at least a pinned magnetic layer. The upper portion includes at least a free magnetic layer. A pair of domain control magnetic layers is formed to sandwich the magnetoresistive film. An insulator film is formed to cover over the domain control magnetic layers. The upper portion is subjected to an etching process. The domain control magnetic layers are reliably prevented from being removed during the etching process. Accordingly, the domain control magnetic layers are allowed to reliably sandwich the upper portion of the magnetoresistive film in the aforementioned manner.

Method of making current-perpendicular-to-the-plane structure magnetoresistive element

A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.

Magnetoresistive sensor

The upper portion of a magnetoresistive film is interposed between insulators in the lateral direction of a recording track in a current-perpendicular-to-the-plane structure magnetoresistive element. Domain control magnetic layers sandwich the upper portion of the magnetoresistive film along with the insulators in the lateral direction. The insulators serve to establish a narrower path for electric current between the lower portion of the magnetoresistive film and an upper electrode layer. The substantial width in the lateral direction can thus be reduced in the magnetoresistive film. In addition, a longitudinal biasing magnetic field established between the domain control magnetic layers efficiently acts on the magnetoresistive film. In particular, if a free magnetic layer is included in the upper portion of the magnetoresistive film, the free magnetic layer can be subjected to a larger longitudinal biasing magnetic field. A single domain property can be realized in the free ferromagnetic layer enough. The Barkhausen noise can be reduced.

Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same

Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

Spin valve magnetoresistive sensor having CPP structure

A current-perpendicular-to-the-plane (CPP) structure electromagnetic transducer element comprises upper and lower electrically-conductive lead layers. The lead layers are employed to supply an electric current to an electromagnetic transducer film. An electrically-conductive terminal piece is allowed to stand on the surface of the lower electrically-conductive lead layer. The contact established between the electrically-conductive terminal piece and the electromagnetic transducer film is allowed to define the path for the electric current. The reduced contact area of the electrically-conductive terminal piece contributes to reduction in the size or extent of the path for the electric current through the electromagnetic transducer film. The path of the electric current can be reduced in the CPP structure electromagnetic transducer element without relying on reduction in the size of the electromagnetic transducer film.

Growing community of inventors

Kawasaki, Japan

Junya Ikeda