Mitsubishi Gas Chemical Company, Inc.

Junya Horiuchi

Masatoshi Echigo

Takashi Makinoshima

Kana Okada

Yu Okada

A compound represented by the following formula (1). The compound can be used as a film forming material for lithography or an optical component forming material. A resin may also be obtained using this compound as a monomer, a composition, a method for forming a resist pattern, a method for forming an insulating film, a method for forming a circuit pattern, and a method for purifying the above compound or resin.

Compound, resin, composition, resist pattern formation method, circuit pattern formation method and method for purifying resin

An object of the present invention is to provide a new compound that is useful as a film forming material for lithography and the like. The above object can be achieved by a compound represented by the following formula (1).

A compound represented by the following formula (1). (in formula (1), each X independently represents an oxygen atom, a sulfur atom, or non-crosslinking, each Ris independently selected from the group consisting of a hydrogen atom, a halogen group, a nitro group, an amino group, a hydroxyl group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group may have an ether bond, a ketone bond or an ester bond, each Rindependently represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, a thiol group or a hydroxyl group, in which at least one Rrepresents a group having a hydroxyl group or a thiol group, each m is independently an integer of 1 to 7, each p is independently 0 or 1, each q is independently an integer of 0 to 4, and n is 0 or 1.)

Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin

A compound or a resin represented by the following formula (1). (in formula (1), each X independently represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each Ris independently selected from the group consisting of a halogen group, a cyano group, a nitro group, an amino group, a hydroxyl group, a thiol group, a heterocyclic group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group optionally include an ether bond, a ketone bond or an ester bond, each Rindependently represents an alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, a thiol group or a hydroxyl group, in which at least one Rrepresents a group including a hydroxyl group or a thiol group, each m is independently an integer of 0 to 7 (in which at least one m is an integer of 1 to 7.), each p is independently 0 or 1, q is an integer of 0 to 2, and n is 1 or 2).

Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method

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Kanagawa, Japan

Junya Horiuchi