Tokyo Electron Limited

Junya Hiraka

Hitoshi Kato

Tsuneyuki Okabe

Hiroyuki Kikuchi

Kohei Fukushima

Masato Yonezawa

Hitoshi Katoh

A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing chamber for a liquid material cooled at a set temperature. The preparatory stage includes obtaining a first limit value of pressure at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, obtaining a second limit value of pressure at which vaporization of the liquid material starts being unstable and the pressure starts pulsating movement due to a decrease in the pressure, and determining the set pressure range to be defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value.

Semiconductor processing system including vaporizer and method for using same

A CVD method for forming a silicon nitride film includes exhausting a process chamber () that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (), and a second period of stopping supply of the silane family gas.

CVD method for forming silicon nitride film

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Oshu, Japan

Junya Hiraka