Cornell University

Junxia Shi

Lester F Eastman

In one example, we describe a new high performance AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor (MISHFET), which was fabricated using HfO2 as the surface passivation and gate insulator. The gate and drain leakage currents are drastically reduced to tens of nA, before breakdown. Without field plates, for 10 &#x3bc;m of gate-drain spacing, the off-state breakdown voltage is 1035V with a specific on-resistance of 0.9 m&#x3a9;-cm2. In addition, there is no current slump observed from the pulse measurements. This is the best performance reported on GaN-based, fast power-switching devices on sapphire, up to now, which efficiently combines excellent device forward, reverse, and switching characteristics. Other variations, features, and examples are also mentioned here.

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Ithaca, NY, United States of America

Junxia Shi