Anhui Cambricon Information Technology Co., Ltd.

Junwei Zhang

Shuai Chen

Shangbin Chen

Zhiwei Qiu

Jingye Xuan

A method according to an embodiment is for forming a capacitor structure on a wafer. A first capacitor is formed on a first side of a wafer, and a second capacitor is formed on a second side of the wafer. The capacitor structure includes the first capacitor and the second capacitor. A trench capacitor is fabricated at both ends of an interposer, which can increase capacitance, and greatly improve the stability of the supplied power.

Capacitor structure and method for forming the same

A memory is included in a combined processing apparatus which may include a computing device, a general interconnection interface, and another processing device. The computing device interacts with the other processing device to jointly complete a computing operation specified by a user. A storage device is respectively connected to the computing device and the other processing device, and is configured to store data of the computing device and the other processing device. The solution of the present disclosure can be widely applied to various data storage fields.

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Anhui, China

Junwei Zhang