Electronics and Telecommunications Research Institute

Junsoo Kim

Seung Min Lee

Seungeon Moon

Jaewoo Lee

Solyee Im

Jungyun Kwon

The present disclosure herein relates to a device for measuring a thermoelectric performance. The device for measuring a thermoelectric performance of a thermoelectric material, which includes a support module configured to generate temperature difference between both ends of the thermoelectric material, a fixing module detachably coupled to the support module to support the thermoelectric material, a temperature measuring unit electrically connected to the fixing module to measure temperature of each of the both ends of the thermoelectric material, and an electromotive force measuring unit electrically connected to the fixing module to measure thermoelectromotive force generated between the both ends of the thermoelectric material. Here, the fixing module includes a first heat sink part and a second heat sink part, which respectively support the both ends of the thermoelectric material.

Device for measuring thermoelectric performance

Provided is a cooling device including a valve structure including a temperature-responsive material that changes in volume in response to changes in temperature, a supporting structure, which is joined to the valve structure and supports the valve structure, and a solvent which contacts the valve structure, wherein a portion of the solvent contacts the valve structure and another portion of the solvent is externally exposed, the valve structure changes in volume in response to changes in temperature and thereby regulating the externally exposed surface area of the solvent.

Cooling device

Provided is a thermoelectric element. The thermoelectric element includes an insulation substrate, a semiconductor layer on the insulation substrate, insulation layers disposed on the semiconductor layer and spaced apart from each other in a first direction parallel with a surface of the insulation substrate, metal thin films disposed on the insulation layers, and metal-semiconductor compound layers between the semiconductor layer and the second parts. Each of the metal thin films includes a first part overlapping the insulation layer and a second part extending from the first part in the first direction or in a direction opposite to the first direction to be connected to the semiconductor layer, and the second parts facing each other in the metal thin films adjacent to each other are spaced apart from each other.

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Daejeon, South Korea

Junsoo Kim