Samsung Electronics Co., Ltd.

Seoul National University

Hyundai Transys Incorporated

Junsik Hwang

Kyungwook Hwang

Seogwoo Hong

Hyunjoon Kim

Joonyong Park

Junhee Choi

Dongho Kim

Sungjin Kang

Seungmin Lee

Dongkyun Kim

Sungwoo Hwang

Deukseok Chung

Kiho Kong

Ho Won Jang

Jehong Oh

Jungel Ryu

Jooho Lee

Yongsung Kim

Sanghoon Song

Sungjin Lim

Wooyoung Yang

Changseung Lee

Euijoon Yoon

Sunghee Lee

Gwon Hwa Bok

Jae Yong Jang

Jongmyeong Kim

Kunmo Chu

Kyeong Ju Kim

Hwa Young Mun

Changyoul Moon

Han Yun Choi

Cheolhwan Yoon

Jong Su Kim

A light-emitting diode (LED) device includes a light-emitting layer having a core-shell structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a passivation layer formed to cover at least a portion of a side surface and a portion of an upper surface of the second semiconductor layer; a first electrode formed on a portion of the passivation layer that is located on a side surface of the light-emitting layer, the first electrode electrically connected to the first semiconductor layer and including a reflective material; and a second electrode formed on a portion of the passivation layer that is located on an upper surface of the light-emitting layer, the second electrode contacting a portion of the upper surface of the second semiconductor layer that is exposed.

LED device, method of manufacturing the LED device, and display apparatus including the LED device

A leg rest apparatus includes a base bracket mounted below a seat cushion of a vehicle seat, a rear link coupled to a lateral portion of the base bracket, a front link coupled to the lateral portion of the base bracket and positioned above the rear link, a main link hingedly coupled to one end of the rear link and a middle portion of the front link, a support link coupled to one end of the front link, and a leg rest link coupled to the main link and one end of the support link.

Leg rest apparatus for vehicle seat

Provided are a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a substrate, a membrane bridge that defines, with the substrate, a plurality of cavities, and a nitride semiconductor layer arranged on the membrane bridge. The membrane bridge and the substrate have the same crystal structure. The membrane bridge has an upper surface with a constant height with respect to a surface of the substrate.

Semiconductor structure and method of manufacturing the same

Provided is a display transfer structure including a substrate including a plurality of wells, and a plurality of light emitting elements disposed in the plurality of wells, wherein the plurality of light emitting elements have a rotationally asymmetric planar shape, and wherein the plurality of wells respectively have a planar shape different from a planar shape of each of the plurality of light emitting elements.

Display transfer structure including light emitting elements and transferring method of light emitting elements

A micro light-emitting element includes a first conductivity type semiconductor layer including a lower surface on which an uneven pattern is formed, an active layer provided on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer provided on the active layer, at least one electrode provided on the second conductivity type semiconductor layer, and a transparent coating layer including a first surface covering the lower surface of the first conductivity type semiconductor layer, and a second surface facing the first surface and having a second surface roughness that is less than a first surface roughness of the lower surface of the first conductivity type semiconductor layer.

Micro light-emitting element, micro light-emitting element array including the micro light-emitting element, and display device including the micro light-emitting element array

A device transfer substrate includes a plurality of recesses, wherein each of the plurality of recesses includes a first region having a shape of a first figure, a second region having a shape of a second figure, and an overlapping region formed as a portion of the first region partially overlaps a portion of the second region, wherein a maximum width of the overlapping region in a direction intersecting with a straight line passing through a center of the first figure and a center of the second figure is less than a diameter or a diagonal length of the first figure and less than a diameter or a diagonal length of the second figure.

Device transfer substrate receiving a light emitting device, device transfer structure, and display apparatus

A micro light emitting device, a display apparatus including the same, and a method of manufacturing the micro light emitting device are disclosed. The micro light emitting device includes a first type semiconductor layer; a light emitting layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the light emitting layer; one or more first type electrodes provided on the second type semiconductor layer; one or more second type electrodes provided on the second type semiconductor layer and spaced apart from the one or more first type electrodes; and a bonding spread prevention portion provided between the one or more first type electrodes and the one or more second type electrodes.

Micro light emitting device, display apparatus including the same, and method of manufacturing the micro light emitting device

A method of manufacturing a micro-light-emitting diode (LED) array includes: providing a first substrate including a plurality of circular grooves formed on a first surface thereof; supplying a plurality of micro-LEDs onto the first surface of the first substrate; and aligning the plurality of micro-LEDs with the plurality of circular grooves, wherein at least two electrodes are formed on a second surface of each of the plurality of micro-LEDs to be apart from each other, and the at least two electrodes include a first electrode formed to be relatively close to a center of the second surface and at least one second electrode formed at an edge of the second surface.

Micro-light-emitting-diode array and method of manufacturing the same

A light-emitting device may include a light-emitting cell emitting first-color light and second-color light, an insulating layer having a flat upper surface while covering the light-emitting cell, a first trench exposing a first semiconductor layer, a second trench exposing a second semiconductor layer, a first electrode in contact with the first semiconductor layer, a second electrode in contact with the second semiconductor layer, and a third electrode in contact with a third semiconductor layer.

Light-emitting device and display apparatus including the same

An LED device includes a light emission layer including a first semiconductor layer including a first surface and a second surface facing the first surface, the second surface having an area larger than an area of the first surface, an active layer on the first surface, and a second semiconductor layer on the active layer, an insulating layer on the first surface, the insulating layer defining an open region of the first semiconductor layer, a first electrode that contacts the first semiconductor layer via the open region, and a second electrode on the second semiconductor layer and contacting the second semiconductor layer.

Light-emitting diode (LED) device, method of manufacturing the same, and display device including the LED device

Provided is a light-emitting device including a body including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode and a second electrode provided on a first surface of the body, the first electrode and the second electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively, and a third electrode and a fourth electrode provided on a second surface of the body, the third electrode and the fourth electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively.

A micro-semiconductor chip wet alignment apparatus is provided. The micro-semiconductor chip wet alignment apparatus includes a semiconductor chip wet supply module configured to supply the plurality of micro-semiconductor chips and a liquid onto the transfer substrate so that the plurality of micro-semiconductor chips are flowable on the transfer substrate; and a chip alignment module including an absorber capable of relative movement along a surface of the transfer substrate and configured to absorb the liquid so that the plurality of micro-semiconductor chips are aligned in the plurality of grooves.

Micro-semiconductor chip wetting alignment apparatus

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

Wet alignment method for micro-semiconductor chip and display transfer structure

A method of transferring a micro light emitting diode (LED) to a pixel array panel includes transferring the micro LED by spraying using an inkjet method, wherein the micro LED comprises an active layer comprising a first portion emitting light in a first direction and a second portion emitting the light in a second direction different from the first direction.

Method of transferring micro-light emitting diode for LED display

A display transferring structure includes a transfer substrate including a plurality of recesses, each of the plurality of recesses including a first trap having a space in which a predetermined object can be moved and a second trap connected to the first trap and having a shape and size in which the object can be seated; and a micro-semiconductor chip positioned in the second trap. The micro-semiconductor chip may be self-aligned in a correct position by the display transferring structure.

Growing community of inventors

Hwaseong-si, South Korea

Junsik Hwang