Kabushiki Kaisha Toshiba

Junsei Tsutsumi

Haruo Okano

Hisashi Kaneko

Nobuo Hayasaka

Junichi Wada

Akihiro Kajita

Masahiko Hasunuma

Sachiyo Ito

Keizo Shimamura

Takashi Kawakubo

Akira Kinno

Mitsushi Ikeda

Kenya Sano

Hideo Hirayama

Michihiro Oose

An image detection device includes a pixel portion (OEF) having a photoelectric conversion film for converting incident light into a signal charge and a pixel capacitor for accumulating the signal charge, and a thin film transistor (TFT ) included in a signal detective circuit operation of which is controlled by a scanning line (G ) to read out the potential of a pixel electrode to a signal line (S ). The transistor (TFT ) having a source or drain connected to the pixel electrode is a TFT having an LDD structure on a high-potential side, a TFT having LDD structures on the high- and low-potential sides in which the LDD length is larger on the high-potential side, or a TFT having a double-gate structure. When the image detection device includes a protective diode (TFT ) for, if the potential of the pixel electrode reaches a predetermined value or more, flowing pixel charges to a bias line (B ) to prevent destruction of the pixel electrode, the transistor (TFT ) has an LDD structure on at least a high-potential side or a double-gate structure. This arrangement can increase the OFF resistance to suppress the leakage current, and can prevent a decrease in S/N ratio owing to leakage of signal charges before a read.

Image detection device

A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film and causing never melting to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches. The formation of the interconnection is also accomplished by forming a conductive film on the surface of a semiconducting substrate having trenches formed therein, exerting thereon uniaxial stress from above the semiconducting substrate, heat treating the formed conductive film thereby flowing the conductive film, to fill the trenches, and polishing the surface of the semiconducting substrate.

Method for production of semiconductor device

A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches.

An electronic part is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging to the transition elements of Groups 3A to 6A and the rare earth elements and an element selected from among boron, carbon, nitrogen, phosphorus, selenium, and tellurium or a compound between oxygen and a transition metal element selected from among the elements of Group 7A and Group 8 and an insulating substance formed of a compound between a simple metal element selected from among the elements belonging to Group 1A, Group 2A, and Groups 1B to 4B and an element selected from among carbon, nitrogen, oxygen, phosphorus, sulfur, selenium, tellurium, and halogen elements in thicknesses fit for obtaining a quantum size effect. The artificial super lattice possesses a barrier layer formed of an insulating substance and an electrode layer formed of a substance of good conductivity and disposed in contact with the barrier layers.

Electronic part incorporating artificial super lattice

Growing community of inventors

Chigasaki, Japan

Junsei Tsutsumi