Murata Manufacturing Co., Ltd.

Junpei Yasuda

Morio Takeuchi

Mari Saji

Taku Kikuchi

Hisashi Yamazaki

Kenichi Uesaka

Tomohisa Komura

Kentaro Funahashi

Yuji Miwa

Hijiri Sumii

Shizuka Kawamura

Toshiki Tabei

An acoustic wave device includes a first acoustic wave chip and a second acoustic wave chip mounted on a substrate, first bumps bonding the first acoustic wave chip to the substrate and including first ground bumps connected to a ground potential, second bumps bonding the second acoustic wave chip to the substrate and including second ground bumps connected to a ground potential. When a number of the first ground bumps is n1, a number of the second ground bumps is n2, a height of the first ground bumps is h1, and a height of the second ground bumps is h2, n1<n2 and h1<h2.

Acoustic wave device

An acoustic wave device includes an antenna terminal, a signal terminal, and a plurality of resonators that are provided on a piezoelectric substrate. The plurality of resonators include a plurality of series arm resonators on a series arm, and the duty of an IDT electrode of the series arm resonator closest to the antenna terminal among the plurality of series arm resonators is smaller than the duty of an IDT electrode of at least one series arm resonator among the other series arm resonators.

Acoustic wave device, duplexer, and filter device

A multiplexer includes a plurality of filters, in which one input/output terminal of each of the plurality of filters is connected to a common terminal, a first filter included in the plurality of filters is a ladder filter and includes at least one series arm resonator connected on a path connecting the common terminal and another input/output terminal of the first filter, at least one parallel arm resonator connected between a connection node provided on the path and a ground, and a switch which is connected in series to a parallel arm resonator connected most nearby to the common terminal among at least one parallel arm resonator and switches between conduction and non-conduction of a node to which the parallel arm resonator is connected and the ground.

Multiplexer and high-frequency filter

A multiplexer includes a first filter circuit including a pass band that is a first frequency band, a second filter circuit including a pass band that is a second frequency band, and an additional circuit. The first filter circuit includes a first terminal connected to a common terminal and a second terminal connected to a first input/output terminal. The second filter circuit includes a third terminal connected to the common terminal and a fourth terminal connected to a second input/output terminal. The additional circuit is connected to the fourth terminal and one of the first and second terminals and includes a series-arm circuit on a series-arm path connecting the fourth terminal to the one of the terminals and a parallel-arm circuit on a parallel-arm path connecting the series-arm path to the ground. The parallel-arm circuit includes only an inductor, a capacitor, or an LC parallel-arm resonant circuit in series with the parallel-arm path.

Multiplexer

A composite filter device includes bandpass filters whose respective one ends are electrically connected in common. A first bandpass filter of the bandpass filters includes a first filter, a switch, a second filter, and an impedance element that is electrically connected to the switch and having an impedance value larger than the input impedance value of the second filter. The switch is configured to be switched between a first state in which the first filter and the second filter are electrically connected and a second state in which the first filter and the impedance element are electrically connected.

Composite filter device

An acoustic wave filter device includes a second filter section connected to a first filter section. The second filter section includes acoustic wave resonators in a ladder circuit configuration. Of the acoustic wave resonators in the first and second filter sections, the acoustic wave resonator having the smallest fractional bandwidth is included in the second filter section. In the second filter section, inductors are respectively connected between parallel arm resonators and a reference potential. Attenuation near a pass band in the second filter section is larger than attenuation near a pass band in the first filter section.

Acoustic wave filter device and composite filter device

A front-end circuit includes an antenna connection terminal, a selection terminal, and a selection terminal, a switching circuit including a common terminal and selection terminals, a receive filter configured to pass a radio-frequency signal in Band B, a signal path connecting the selection terminal and the selection terminal and including the receive filter, a signal path connecting the selection terminal and the selection terminal and defining and functioning as a bypass path without any filter, and a filter coupled between the antenna connection terminal and the common terminal and configured to pass a first frequency range group including Band B.

Front-end circuit and communication device

An electronic module includes a substrate that includes a first main surface and a second main surface, at least one first electronic component that includes electrodes on a mounting surface thereof on the substrate and that includes a hollow portion, at least one second electronic component that includes electrodes on a mounting surface thereof on the substrate and that includes no hollow portion, and a sealing resin. The at least one first electronic component is mounted on the first main surface of the substrate and sealed with the sealing resin. The at least one second electronic component is mounted on the second main surface of the substrate and is not sealed with the sealing resin.

Electronic module with sealing resin

A filter module includes a filter provided on a path connecting an input/output terminal and an input/output terminal, a filter provided on a path connecting an input/output terminal and an input/output terminal, a switch that switches between electrical connection and electrical disconnection between a wire connected to the input/output terminal and a ground, and a switch that switches between electrical connection and electrical disconnection between a wire connected to the input/output terminal and the ground. When the wire and the ground are electrically connected by the switch, the wire and the ground are electrically disconnected by the switch, and when the wire and the ground are electrically connected by the switch, the wire and the ground are electrically disconnected by the switch.

Filter module

An acoustic wave device includes a piezoelectric substrate, a first band pass filter that is on the piezoelectric substrate and has a first pass band, and a second band pass filter that is on the piezoelectric substrate and has a second pass band at a higher frequency than the first pass band. The first and second band pass filters include resonators that include respective IDT electrodes. When a first total average metallization ratio is defined as an average of metallization ratios of all of the IDT electrodes included in the first filter and a second total average metallization ratio is defined as an average of metallization ratios of all of the IDT electrodes included in the second filter, the first total average metallization ratio is greater than the second total average metallization ratio.

Acoustic wave device and method of manufacturing the same

A composite filter device includes an antenna common terminal, a first band pass filter having a first pass band, and a second band pass filter having a second pass band located at higher frequencies than the first pass band. The first band pass filter includes an elastic wave resonator. The elastic wave resonator includes a LiNbOsubstrate, an IDT electrode on the LiNbOsubstrate, and a dielectric film that covers the IDT electrode and includes a silicon oxide as a main component. When f' is the frequency of a Sezawa wave of the first band pass filter and fis the center frequency of the second pass band, f&#x2032; is located at a different position from f

Composite filter device, high-frequency front end circuit, and communication device

A filter device includes a substrate and first to third filters provided on the substrate and each including an input terminal and an output terminal. A center frequency of a pass band of the first filter is lower than a center frequency of a pass band of the second filter, and the center frequency of the pass band of the second filter is lower than a center frequency of a pass band of the third filter. Of the first and third filters, when the filter having the center frequency of the pass band close to the center frequency of the filter is defined as a proximity filter and the other is defined as a non-proximity filter, an input terminal and an output terminal of the proximity filter are not adjacent to an input terminal and an output terminal of the second filter.

Filter device and filter module

An elastic wave device includes a first filter including an elastic wave resonator and a second filter connected to an antenna common terminal via a common node. When a first pass band of the first filter and second pass bands of the second filters are Fand Frespectively, F&#x3c;FThe first filter includes at least one elastic wave resonator, and the elastic wave resonator uses Rayleigh waves propagating on a piezoelectric substrate made of LiNbO, IDT electrodes including a Pt film on a piezoelectric layer made of LiNbO, and a silicon oxide film covering the IDT electrodes. The thickness of the silicon oxide layer is about 33% or less of the wavelength of the IDT electrodes.

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Nagaokakyo, Japan

Junpei Yasuda