Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Junpei Yamamoto

Toshifumi Wakano

Akira Matsumoto

Yusuke Otake

Masahiko Nakamizo

Ryusei Naito

Shinpei Fukuoka

Takushi Shigetoshi

Hideaki Togashi

Sho Nishida

Moe Takeo

Shuji Manda

Tomoyuki Hirano

Nobutoshi Fujii

Naoyuki Sato

Kazunobu Ota

Koichiro Zaitsu

Naohiko Kimizuka

Ryosuke Matsumoto

Shinichi Miyake

Keiji Ohshima

Keiichi Nakazawa

Hirofumi Yamashita

Shigetaka Mori

Shinji Nakagawa

Shintaro Okamoto

Yohei Hiura

Takanori Tada

Tatsuki Miyaji

Yui Yuga

Tsukasa Miura

Yasushi Hamamoto

Tomoki Kambe

Ryo Ogata

A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Photodetector

There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

Solid-state imaging device

A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G, and g) of transistors (AMP, RST, TG, and TG) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element

Provided is an imaging element that includes a semiconductor substrate, a first photoelectric converter, a through electrode, a first dielectric film, and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter and penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate and has a first film thickness. The second dielectric film is provided on a side surface of the through hole and has a second film thickness. The second film thickness is less than the first film thickness.

Imaging element and imaging device

A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.

Solid-state image sensor, solid-state imaging device, and method of manufacturing solid-state image sensor

There is provided an imaging device with a semiconductor substrate having a first side and a second side opposite the first side. A photoelectric conversion unit is on the first side of the semiconductor substrate. A multilayer wiring layer is on the second side of the semiconductor substrate. A through electrode extends between the photoelectric conversion unit and the multilayer wiring layer. The multilayer wiring layer includes a local wiring layer. A second end of the through electrode is in direct contact with the local wiring layer.

Solid-state imaging device and method for producing the same, and electronic device

The present disclosure relates to a solid state image sensor, a fabrication method, and an electronic apparatus, which enable to efficiently provide trench structures, which surrounds respective pixel sections of the solid state image sensor, and through-electrodes side by side. A solid state image sensor according to a first aspect of the present disclosure includes photoelectric conversion sections formed in respective pixel sections of a semiconductor substrate, trench structures defined by walls of insulating films formed in a depth direction of the semiconductor substrate and surrounding the respective pixel sections, and through-electrodes formed through the semiconductor substrate at positions overlapping the respective trench structures. The present disclosure can be applied, for example, to back-side illumination CMOS image sensors.

Solid state image sensor, fabrication method, and electronic apparatus

A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode () and a cathode (). The cathode is in a well region () of the first substrate. The first pixel includes an isolation region () that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region () between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.

Solid-state image sensing device and method for manufacturing the same, and electronic device

Growing community of inventors

Kanagawa, Japan

Junpei Yamamoto