Tdk Corporation

Junpei Morishita

A piezoelectric thin film includes a first piezoelectric layer and a second piezoelectric layer directly stacked on the first piezoelectric layer. The first piezoelectric layer contains a tetragonal crystalof a perovskite-type oxide. The second piezoelectric layer contains a tetragonal crystalof a perovskite-type oxide. A (001) plane of the tetragonal crystalis oriented in a normal direction do of a surface of the piezoelectric thin film. A (001) plane of the tetragonal crystalis oriented in the normal direction dn of the surface of the piezoelectric thin film. An interval of the (001) plane of the tetragonal crystalis c, an interval of a (100) plane of the tetragonal crystalis a, an interval of the (001) plane of the tetragonal crystalis c, an interval of a (100) plane of the tetragonal crystalis a, c/ais more than c/aand c/ais from 1.015 to 1.050.

Piezoelectric thin film, piezoelectric thin film element, and piezoelectric transducer

Provided is a piezoelectric thin film containing a tetragonal crystalof a perovskite type oxide and a tetragonal crystalof the oxide. A (001) plane of the tetragonal crystaland a (001) plane of the tetragonal crystalare oriented in a normal direction of a surface of the piezoelectric thin film. An interval of the (001) plane of the crystalis c1. An interval of a (100) plane of the crystalis al. An interval of the (001) plane of the crystalis c2. An interval of a (100) plane of the crystalis a2. c2/a2 is more than c1/a1. A peak intensity of diffracted X-rays of the (001) plane of the crystalis I. A peak intensity of diffracted X-rays of the (001) plane of the crystalis I. I(I+I) is from 0.50 to 0.90.

Piezoelectric thin film, piezoelectric thin film element and piezoelectric transducer

Provided is a piezoelectric thin film containing a tetragonal crystalof a perovskite type oxide and a tetragonal crystalof the oxide. A (001) plane of the tetragonal crystaland a (001) plane of the tetragonal crystalare oriented in a normal direction of a surface of the piezoelectric thin film. An interval of the (001) plane of the crystalis c. An interval of a (100) plane of the crystalis a. An interval of the (001) plane of the crystalis c. An interval of a (100) plane of the crystalis a. c/ais more than c/a. A peak intensity of diffracted X-rays of the (001) plane of the crystalis I. A peak intensity of diffracted X-rays of the (001) plane of the crystalis I. I/(I+I) is from 0.50 to 0.90.

A piezoelectric thin filmcontains a metal oxide, the metal oxide contains bismuth, potassium, titanium, iron and element M, the element M is at least one of magnesium and nickel, at least a part of the metal oxide is a crystal having a perovskite structure, and a () plane, a () plane or a () plane of the crystal is oriented in a normal direction dn of the surface of the piezoelectric thin film

Piezoelectric thin film, piezoelectric thin film device, piezoelectric actuator, piezoelectric sensor, piezoelectric transducer, hard disk drive, printer head, and ink jet printer device

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Tokyo, Japan

Junpei Morishita