Hitachi, Ltd.

Hitachi Automotive Systems, Ltd.

Renesas Technology Corp.

Hitachi Astemo Ltd.

Renesas Electronics Corporation

Hitachi Power Semiconductor Device, Ltd.

Junpei Kusukawa

Toshiaki Ishii

Nobutake Tsuyuno

Eiichi Ide

Ryozo Takeuchi

Kinya Nakatsu

Tokihito Suwa

Hiromichi Suzuki

Takeshi Tokuyama

Fujio Ito

Akihiko Kameoka

Yoshitaka Takezawa

Koji Obata

Eiji Nishioka

Hironori Matsumoto

Toshiya Satoh

Yuki Kawaguchi

Hiroshi Hozoji

Yujiro Kaneko

Takae Shimada

Naoki Sakurai

Takashi Hirao

Takafumi Nishita

Toru Masuda

Akira Matsushita

Kinya Kobayashi

Junnosuke Nakatsugawa

Shintaro Tanaka

Yasuaki Norimatsu

Hiroshi Morita

Hiroshi Kamizuma

Masahiko Asano

Tadahiko Chida

Atsushi Otake

Masashi Yura

Masami Oonishi

Fusao Hojo

Masahito Mochizuki

Daichi Kawamura

Hironori Nagasaki

Masaru Yamada

Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor deviceincludes a first terminalprojecting from a sealing bodyalong a given direction, and a second terminaladjacent to the first terminalwith a space formed between the second terminaland the first terminal, the second terminalprojecting from the sealing bodyalong a given direction in a direction of projection that is the same as a direction of projection of the first terminal. The first terminalhas a first exposed partexposed outside the sealing body. The second terminalhas a second sheathed partprojecting from the sealing body, the second sheathed partbeing sheathed with an insulating material, and a second exposed partprojecting from the second sheathed part, the second exposed partbeing exposed outside the sealing body. A distance D2 along a given direction from a front endof the second sheathed partto the sealing bodyis longer than a distance D1 along the given direction from a front endof the first exposed partto the sealing body

Semiconductor device, busbar, and power converter

A power semiconductor apparatus provided with a first conductor section connected to a direct-current terminal for transmitting direct-current power; a second conductor section connected to an alternating-current terminal for transmitting alternating-current power; a semiconductor element which is disposed between the first conductor section and the second conductor section and is for converting the direct-current power to the alternating-current power; and an interposition section disposed between the first conductor section and the second conductor section, in which the interposition section has a first conductor layer connected to the first conductor section, a second conductor layer connected to the second conductor section, and a plurality of insulation layers disposed between the first conductor layer and the second conductor layer, with one or a plurality of third conductor layers sandwiched between the plurality of insulation layers.

Power semiconductor apparatus

A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Semiconductor device, electric power conversion device, and manufacturing method of semiconductor device

An object is to suppress a decrease in reliability due to peeling of an insulating layer and another member of a power semiconductor device. A power semiconductor device according to the present invention includes: a power semiconductor element; a conductor portion that transmits a current to the power semiconductor element; an insulating layer in contact with a surface of the conductor portion on a side opposite to a side on which the power semiconductor element is arranged; a metallic heat dissipating portion that opposes the conductor portion while sandwiching the insulating layer; and an output terminal that is connected to the conductor layer and outputs a different signal depending on a contact state of the insulating portion, the insulating layer having an insulating portion and a conductor layer sandwiched between the conductor portion and the metallic heat dissipating portion via the insulating portion.

Power semiconductor device and power conversion device using the same

In order to provide a transformer and an electric power converter which are less likely to become deteriorated with time and which have stable insulation performance, the transformer according to the present invention is provided with: a core; a bobbin in which a low-voltage-side primary winding and a high-voltage-side secondary winding are disposed along the central magnetic leg of the core; and a bobbin support part that supports the bobbin at an end of the bobbin on the primary winding side, such that an air gap is provided between the central magnetic leg of the core and a surface of the bobbin corresponding to the secondary winding.

Transformer and electric power converter

When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as 'a', and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as 'b', the positional relationship a&#x3c;b is satisfied. The position of the end portion of the solder is regulated by the solder resist, and the position of the end portion of the brazing material on the side of the side surface of the insulating substrate is closer to the side of the side surface of the insulating substrate than to the position of the end portion of the solder on the side of the side surface of the insulating substrate.

Power semiconductor module

An object of the present invention is to provide a power module capable of realizing a superior heat radiation property while satisfying a high insulation property. A power module according to the present invention includes: a conductor plate to which a switching element is connected; a heat radiation plate which is disposed to face the conductor plate; an insulating member which is disposed between the conductor plate and the heat radiation plate; and a conductive intermediate conductor which is disposed in the insulating member in a state of being electrically insulated from the conductor plate and the heat radiation plate, wherein the intermediate conductor has a communication region which communicates between the insulating member disposed on the side of the conductor plate with respect to the intermediate conductor and the insulating member disposed on the side of the heat radiation plate with respect to the intermediate conductor.

Power module

It is an object of the present invention to provide a power module which can withstand a high voltage with a thin insulating layer. A power module of the present invention is provided with a first power semiconductor elementof an upper arm side constituting an inverter circuit, a second power semiconductor elementof a lower arm side, a first conductor partwhich transmits an alternating current, a second conductor partwhich transmits a direct current, an electrically-conductive heat dissipating part, a first intermediate conductor layerdisposed between the first conductor partand the heat dissipating partvia an insulating layer, and a second intermediate conductor layerdisposed between the second conductor partand the heat dissipating partvia the insulating layer, wherein, the second intermediate conductor layeris formed to be separated from the first intermediate conductor layer, and the first intermediate conductor layerforms a capacity circuit which shares the voltage between the first conductor partand the heat dissipating part

An insulation film that strongly adheres to a power semiconductor module having a resin sealer and a conductor plate and has high thermal conductivity is provided. An insulation layeris provided between a power semiconductor moduleand a heat dissipation portionB. The power semiconductor moduleincludes a resin sealer, which covers a circumferential side surface of a conductor plate, and a plurality of recessesD are provided in the resin sealer. The insulation layeris formed of a spray coated film, an insulation film, and a resin layer, and the spray coated filmis formed on the surface of the resin sealerincluding recessesD to form a seamless flat surface. The planar size of each of the recessesD is greater than the planar size of each flat portion, which forms the spray coated film

Power semiconductor module and power module

A capacitor device includes: a film capacitor element that has a coiled body in which an insulating layer and an electrification layer are laminated and wound together, and a pair of collector electrodes that are formed upon two opposite end faces of the coiled body; a case that has a capacitor housing portion within which the film capacitor element is received; a pair of inserts having insulation properties, one of which is inserted between one of the pair of collector electrodes and one of inner walls of the capacitor housing portion; and a mass of sealing and insulating material that is charged between the film capacitor element and the one of the inner walls of the capacitor housing portion.

Capacitor device and electrical power conversion device

A power module includes a sealed body in which a semiconductor chip-mounted conductor plate is sealed by a resin in such a manner that a heat dissipating surface of the conductor plate is exposed, a heat dissipating member that is arranged to face the heat dissipating surface, and an insulation layer that is arranged between the sealed body and the heat dissipating member. The insulation layer has a laminated body that is made by laminating an impregnation resin-impregnated ceramic thermal spray film and a bonding resin layer in which a filler having good thermal conductivity is mixed, and that is provided to be in contact with the heat dissipating member and at least the entirety of the heat dissipating surface, and a stress relief resin portion that is provided in a gap between the heat dissipating member and the sealed body to cover an entire circumferential end portion of the laminated body.

Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di&#x3e;(1.36&#xd7;10-8&#xd7;Vt2+3.4&#xd7;10-5&#xd7;Vt&#x2212;0.015)&#xd7;&#x2208;r, where a relative permittivity of the insulating member is &#x2208;r and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

The present invention is a power distribution mounting component operable at high voltages. More specifically, the power distribution mounting component includes: an insulating layer; current-carrying first conductor layers sandwiching the insulating layer; and a second conductor layer (thinner than the first conductor layers) interposed between the insulating layer and at least one of the first conductor layers. Each the second conductor layer between the insulating layer and the overlying current-carrying first conductor layer is sufficiently thinner than the first conductor layer and is therefore formed in close adhesion to the insulating layer, thereby increasing the partial discharge inception voltage of the power distribution mounting component and therefore its insulation reliability.

Power distribution mounting component and inverter apparatus using same

Heat radiation surfacesandof electrode lead framesandmake thermal contact with heat radiation membersvia insulation sheetsto dissipate heat from a power semiconductor elementto the heat radiation members (thick portions). Each of exposed areas of the heat radiation surfacesandand a surfaceof a mold material (sealing material) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surfaceadjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surfaceorso configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

Power semiconductor unit, power module, power semiconductor unit manufacturing method, and power module manufacturing method

A totally enclosed motor which includes a rotor disposed inside a housing and a heat of the rotor is transferred to the housing, a stator disposed inside the housing and a heat of the stator is transferred to the housing, and an inner fin which is disposed in the rotor and agitates air inside the housing. The totally enclosed motor is cooled by a forced convection by an outer fan disposed outside the housing, or by a natural convention in the vicinity of an outer surface of the housing, and a shape of the rotor is different between one end side and the other end side of the rotor in an extending direction of a rotary shaft of the rotor.

Growing community of inventors

Tokyo, Japan

Junpei Kusukawa