Toyoda Gosei Co., Ltd.

Kanagawa Academy of Science and Technology

Junpei Kasai

Miki Moriyama

Tetsuya Hasegawa

Taro Hitosugi

Koichi Goshonoo

Yutaka Furubayashi

Yasushi Hirose

When a p-layercomposed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layeris in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5&#xd7;10Pa or lower. The temperature of the thermal treatment is 500&#xb0; C. for about 1 hour.

Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layer

There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlGaInN layer (wherein 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;z&#x2266;1) and an oxide material layer composed of a metal oxide and formed on the AlGaInN layer. The metal oxide may be TiO. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

Internal gear pump

Growing community of inventors

Aichi-ken, Japan

Junpei Kasai