Qualcomm Incorporated

Nxp B.v.

Junmou Zhang

Nan Chen

Lew G Chua-Eoan

Zhi Zhu

Chuang Zhang

Yuancheng Christopher Pan

Guoan Zhong

Mikhail Popovich

Fifin Sweeney

Yuan-cheng Christopher Pan

Yuan-Cheng Pan

Reza Jalilizeinali

Boris Andreev

Jian Qing

Jason R Gonzalez

Mohamed Waleed Allam

Min Chen

Brad Gunter

Taesik Na

Jim Caravella

Lingyun Wang

Jason Gonzalez

Yuan-Cheng Christopher Pan

An apparatus and a method to adjust a source voltage based on an operating voltage response are provided. The apparatus includes a circuit configured to change state from a first state to a second state comprising receiving an operating voltage from a power source through a power distribution network. The apparatus further includes a sensor configured to measure an operating voltage response to the circuit changing state to receiving the operating voltage. The apparatus further includes a control circuit configured to adjust a source voltage at the power source based on the operating voltage response measured by the sensor. The method includes changing a state to receiving an operating voltage from a power source through a power distribution network, measuring an operating voltage response to the changing state to receiving the operating voltage, and adjusting the source voltage at the power source based on the measured operating voltage response.

Adjusting source voltage based on operating voltage response

An apparatus for sensing distributed load currents provided by power gating circuit. The apparatus includes a power gating circuit including a set of bulk transistors coupled in series with a set of circuits between first and second voltage rails. The apparatus includes a current sensor with a first ring oscillator, a first frequency-to-code (FTC) converter, a second ring oscillator, a second FTC converter, and a subtractor. The first ring oscillator includes a first set of one or more inverters configured to receive a first voltage at a node between the power gating circuit and the first circuit, and a second set of one or more inverters configured to receive a second voltage at a second node between the power gating circuit and the second circuit. The first ring oscillator is configured to generate a signal including a frequency related to the voltage drops across the first and second sets of transistors.

Apparatus and method for sensing distributed load currents provided by power gating circuit

In one embodiment, a method for measuring current comprises generating a sensor current based on a current being measured. The method also comprises converting a combined current into a first frequency, wherein the combined current is a sum of the sensor current and a common-mode current, and converting the first frequency into a first count value. The method further comprises converting the common-mode current into a second frequency, converting the second frequency into a second count value, and subtracting the second count value from the first count value to obtain a current reading.

Low power small area oscillator-based ADC

Systems and methods for sensing temperature on a chip are described herein. In one embodiment, a temperature sensor comprises a first transistor having a gate, a second transistor having a gate coupled to the gate of the first transistor, and a bias circuit configured to bias the gates of the first and second transistors such that the first and second transistors operate in a sub-threshold region, and to generate a current proportional to a difference between a gate-to-source voltage of the first transistor and a gate-to-source voltage of the second transistor. The temperature sensor also comprises an analog-to-digital converter (ADC) configured to convert the current into a digital temperature reading.

Low power low cost temperature sensor

A method, an apparatus, and a computer program product for wireless communication are provided. The apparatus may be used for detecting an incorrect clock frequency. In one example, the apparatus includes a first circuit configured to compare a clock signal period to a delay period. Additionally, in one example, the apparatus includes a second circuit configured to output a first signal. The period of the first signal may be double the clock signal period when the clock signal period is greater than the delay period. The apparatus may, in one example, also include a third circuit configured to output a second signal. The period of the second signal may be greater than double the clock signal period when the clock signal period is greater than the delay period.

Frequency sensor for side-channel attack

One feature pertains to a true random number generator that utilizes the settling time of a bit cell as an entropy source to generate random digital output values. The bit cell may be a static random access memory bit cell. The bit cell's settling time may be converted into a digital output using an analog to digital converter. A plurality of bit cells may serially couple to one another in a ring formation. The bit cell ring can then be enabled such that each bit cell of the plurality of bit cells achieves a settling value that activates the subsequent bit cell in the ring causing it to in turn reach a settling value, and so on. An output node of one of the bit cells in the ring can then be sampled using a flip-flop to generate a continuous stream of random bits.

Methods and apparatuses for generating random numbers based on bit cell settling time

Systems and methods for sensing voltage on a chip are described herein. In one embodiment, a voltage sensor comprises a voltage-controlled oscillator coupled to a voltage being sensed, and a plurality of transition detectors, wherein each of the transition detectors is coupled to a different location on the oscillator, and wherein each of the transition detectors is configured to count a number of transitions at the respective location over a time period. The voltage sensor also comprises an adder configured to add the numbers of transitions from the transition detectors to generate an output value that is approximately proportional to the voltage.

Low power high resolution oscillator based voltage sensor

A signal generator configured to generate an oscillating signal with a temperature-compensated frequency. The signal generator includes a ring oscillator, and a complementary to absolute temperature (CTAT) current generator configured to generate a CTAT current for the ring oscillator to temperature-compensate the frequency of the oscillating signal.

Temperature-compensated signal generator for supply voltage monitoring

A stacked integrated circuit includes a first tier IC and a second tier IC. Active faces of the first tier IC and the second tier IC face each other. An interconnect structure, such as microbumps, couples the first tier IC to the second tier IC. An active portion of a voltage regulator is integrated in the first semiconductor IC and coupled to passive components (for example a capacitor or an inductor) embedded in a packaging substrate on which the stacked IC is mounted. The passive components may be multiple through vias in the packaging substrate providing inductance to the active portion of the voltage regulator. The inductance provided to the active portion of the voltage regulator is increased by coupling the through via in the packaging substrate to through vias in a printed circuit board that the packaging substrate is mounted on.

Integrated voltage regulator with embedded passive device(s) for a stacked IC

Embodiments of a voltage reference circuit are described. In one embodiment, a voltage reference circuit includes a startup circuit configured to generate a startup current and to be turned off in response to a comparison between the startup current and a current threshold, an amplifier connected to the startup circuit and configured to generate an amplified current using a positive current feedback loop in response to the startup current, and a proportional to absolute temperature (PTAT) current generator configured to generate a temperature-independent reference voltage in response to the startup current and the amplified current. Other embodiments are also described.

Low power fast settling voltage reference circuit

A block power switch may be embedded with electrostatic discharge (ESD) protection circuitry. A transistor portion of the block power switch may be allocated to act as part of ESD protection circuitry and may be combined with an RC clamp to provide ESD protection. Adaptive body biasing (ABB) may be applied to the block power switch to reduce on-chip area and decrease leakage current of the block power switch.

Block power switch with embedded electrostatic discharge (ESD) protection and adaptive body biasing

Embodiments of a linear voltage regulator are described. In one embodiment, the linear voltage regulator includes a PMOS low drop-out (LDO) regulator configured to convert an input voltage to a regulated voltage, a charge pump connected to the PMOS LDO regulator and configured to amplify the regulated voltage into an amplified voltage, and an NMOS LDO regulator connected to the charge pump and configured to convert the amplified voltage into an output voltage. Other embodiments are also described.

Low power low dropout linear voltage regulator

Systems and method for a capacitor-less Low Dropout (LDO) voltage regulator. An error amplifier is configured to amplify a differential between a reference voltage and a regulated LDO voltage. Without including an external capacitor in the LDO voltage regulator, a Miller amplifier is coupled to an output of the error amplifier, wherein the Miller amplifier is configured to amplify a Miller capacitance formed at an input node of the Miller amplifier. A capacitor coupled to the output of the error amplifier creates a positive feedback loop for decreasing a quality factor (Q), such that system stability is improved.

On-chip low voltage capacitor-less low dropout regulator with Q-control

A system and method to regulate voltage is disclosed. In a particular embodiment, a voltage regulator includes an error amplifier, a voltage buffer responsive to the error amplifier, and a first transistor responsive to the voltage buffer and coupled to a voltage supply source. A second transistor is coupled to the voltage supply source and further coupled to an output node. A third transistor is coupled to the first transistor and has a gate coupled to a capacitor. The capacitor is coupled to a node between the error amplifier and the voltage buffer.

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San Diego, CA, United States of America

Junmou Zhang