Sony Corporation

Junli Wang

Toyotaka Kataoka

Tomoyuki Hirano

Masaki Saito

Yoshiya Hagimoto

A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

Semiconductor device and a method of manufacturing the same

Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

A method of manufacturing a semiconductor device that includes a first and second device regions on a substrate. The method includes the steps of forming an insulation layer on the substrate, laminating a first semiconductor layer having a plane orientation different from the surface of the substrate on the insulation layer and exposing the substrate by removing the insulation layer and the first semiconductor layer from the second device region. A second semiconductor layer having the same plane orientation as the substrate and that is made of a strained layer is formed by epitaxial growth on the exposed substrate in the second device region.

Method of fabricating PMOS and NMOS transistor on the same substrate

A semiconductor device including an NMOS region and a PMOS region in the same substrate, wherein the semiconductor device includes a strained Si layer which is provided on the substrate in the NMOS region and in which the surface has a plane orientation different from that of the substrate, and a strained SiGe layer which is provided on the substrate in the PMOS region and which is composed of a stained layer having the same plane orientation as that of the surface of the substrate; and a method of manufacturing the same.

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Kanagawa, Japan

Junli Wang