Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Junko Naganuma

Hiroshi Kudo

Sadahiro Kishii

A semiconductor device formed by the steps of: forming a dummy electrodeand a dummy electrode; forming a metal filmon the dummy electrode; conducting a thermal treatment at a first temperature to substitute the dummy electrodewith an electrodeof a material containing the constituent material of the metal film; forming a metal filmon the dummy electrode; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrodeand the metal filmdoes not take place, to substitute the second dummy electrode with an electrodeof a material containing the constituent material of the metal film

Semiconductor device and method for fabricating the same

The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrodeand a dummy electrode; forming a metal filmon the dummy electrode; conducting a thermal treatment at a first temperature to substitute the dummy electrodewith an electrodeof a material containing the constituent material of the metal film; forming a metal filmon the dummy electrode; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrodeand the metal filmdoes not take place, to substitute the second dummy electrode with an electrodeof a material containing the constituent material of the metal film

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Kawasaki, Japan

Junko Naganuma